SKKQ 1500/18E Absolute Maximum Ratings Symbol Conditions Values Unit Module W1C, sin. 180, 20 s, T =150 C, jmax I 1500 A overload T =40C jstart I T =25C 17000 A j TSM 10 ms T =125 C 15000 A j 2 i t T =25C 1445000 As j 10 ms T =125 C 1125000 As j V 1900 V RSM SEMiSTART V RRM 1800 V V DRM 1) T -40 ... + 125 C Antiparallel thyristors for j T -40 ... + 125 C stg softstart Characteristics SKKQ 1500/18E Symbol Conditions min. typ. max. Unit V T =25C, I = 1700 A 1.5 V j T T Features V T = 125 C 0.85 V j T(TO) Compact design r T = 125 C 0.3 m j T Thyristor with amplifiying gate I I T =125 C, V =V , per module 190 mA Pressure contact technology DD RD j RD RRM t T =25C, I =1 A, di /dt = 1 A/s 1s j G G gd Typical Applications* t V = 0.67 * V 2s gr D DRM Soft starters (dv/dt) T = 125 C 1000 V/s j cr Remarks (di/dt) T = 125 C, f = 50 ... 60 Hz 200 A/s j cr Please note: This module has no soft t T = 125 C 200 s j q mold protection around the chip. It is I T =25C 150 500 mA j H therefore susceptible to environmental I T =25C, R =33 300 2000 mA j G L influences (dust, humidity, etc.). The V T =25C, d.c. 3V humidity test according to j GT IEC60068-2-67 is not passed by this I T =25C, d.c. 200 mA j GT product. V T = 125 C, d.c. 0.25 V j GD Recommendation: The devices should I T = 125 C, d.c. 10 mA j GD be installed in control cabinets of IP54 R continuous DC, per thyristor 0.037 K/W degree of protection. th(j-r) M to terminals 4.25 5.75 Nm t Footnotes m approx. 1200 g 1) T up to 150C is allowable for overload jmax Case 2 conditions, max. time period for the overload condition is 20s. W1C by SEMIKRON Rev. 1 20.09.2013 1SKKQ 1500/18E Fig. 2: Power dissipation of three modules vs. rms Fig. 1: Power dissipation per module vs. rms current current Fig. 4: Typ. transient thermal impedance Z vs. time th(s-a) Fig. 3: Transient thermal impedance Z vs. time th(j-r) (natural cooling) Fig. 5: Typ. cooling down vs. time (natural cooling) Fig. 6: Typ. overload current vs. time (natural cooling) 2 Rev. 1 20.09.2013 by SEMIKRON