SKT 1200/16 E Absolute Maximum Ratings Symbol Conditions Values Unit Chip I T =85C 1200 A T(AV) c sinus 180 T =100 C 840 A c I T =25C 30000 A TSM j 10 ms T =125 C 25500 A j 2 i t T =25C 4500000 As j 10 ms T =125 C 3251250 As j V 1600 V Capsule Thyristor RSM V 1600 V RRM V 1600 V DRM (di/dt) T = 125 C 125 A/s cr j (dv/dt) T = 125 C 1000 V/s cr j Line Thyristor T -40 ... +125 C j SKT 1200/16 E Module T -40 ... +130 C stg Features Characteristics Hermetic metal case with ceramic insulator Symbol Conditions min. typ. max. Unit Capsule package for double sided Chip cooling V T =25C, I = 3600 A 1.65 V Shallow design with single sided j T T cooling V T = 125 C 0.95 V j T(TO) International standard case r T = 125 C 0.18 m j T Off-state and reverse voltages up to I I T =125 C, V = V V = V 160 mA DD RD j DD DRM RD RRM 1800 V t T =25C, I =1 A, di /dt = 1 A/s 1s Amplifying gate j G G gd t V = 0.67 * V 2s gr D DRM t T = 125 C 100 250 s j q Typical Applications* I T =25C 250 500 mA j H DC motor control (e. g. for machine I T =25C, R =33 500 2000 mA tools) j G L Controlled rectifiers (e. g. for battery V T =25C, d.c. 3V j GT charging) I T =25C, d.c. 250 mA j GT AC controllers (e. g. for temperature V T = 125 C, d.c. 0.25 V j GD control) I T = 125 C, d.c. 10 mA Recommended snubber network e. g. j GD for V 400 V: R = 33 /32 W, C = VRMS R SSC K/W th(j-c) continuous DC 1 F DSC 0.021 K/W R SSC 0.054 K/W th(j-c) sin. 180 DSC 0.0225 K/W R SSC 0.06 K/W th(j-c) rec. 120 DSC 0.027 K/W Module R SSC 0.01 K/W th(c-s) DSC 0.005 K/W F2225KN a m/s w480g SKT by SEMIKRON Rev. 0 08.07.2013 1SKT 1200/16 E Fig. 1L: Power dissipation vs. on-state current Fig. 1R: Power dissipation vs. ambient temperature Fig. 2L: Rated on-state current vs. case temperature Fig. 2R: Rated on-state current vs. case temperature Fig. 3: Recovered charge vs. current decrease Fig. 4: Transient thermal impedance vs. time 2 Rev. 0 08.07.2013 by SEMIKRON