RClamp2451ZA Ultra Small RClamp 1-Line, 24V ESD Protection PROTECTION PRODUCTS Description Features High ESD withstand voltage: +/-14kV (contact) and RailClamp TVS diodes are ultra low capacitance devices +/-18kV (air) per IEC 61000-4-2 designed to protect sensitive electronics from damage Able to withstand over 1000 ESD strikes per IEC or latch-up due to ESD, EFT, and EOS. They are designed 61000-4-2 Level 4 for use on high speed ports in applications such as cell Ultra-small 0201 package phones, notebook computers, and other portable elec- Protects one high speed data line tronics. These devices offer desirable characteristics for Low ESD clamping voltage board level protection including fast response time, low Working voltage: +/- 24V operating and clamping voltage, and no device degrada- Low capacitance: 0.35pF Typical tion. Low leakage current Low dynamic resistance: 0.16 Ohms Typical Solid-state silicon-avalanche technology RClamp2451ZA is specifically designed for protection of Near Field Communications (NFC) interfaces. It fea- tures extremely good ESD protection characteristics Mechanical Characteristics including a low typical dynamic resistance of 0.16 Ohms (typical), low peak ESD clamping voltage, and high ESD SLP0603P2X3F package withstand voltage (+/-14kV contact per IEC 61000-4-2). Pb-Free, Halogen Free, RoHS/WEEE compliant Low typical capacitance (0.35pF at V =0V) means that Nominal Dimensions: 0.6 x 0.3 x 0.25 mm R RClamp2451ZA will not create harmonic distortion in the Lead Finish: NiAu RF signal. This device is bidirectional and has a working Marking: Marking code voltage of 24V for use on NFC resonator circuits without Packaging: Tape and Reel signal clipping. Applications RClamp2451ZA is in a 2-pin SLP0603P2X3F package measuring 0.6 x 0.3 mm with a nominal height of Near Field Communication (NFC) lines 0.25mm. Leads are finished with lead-free NiAu. The RF signal lines combination of working voltage, low dynamic resistance, FM Antenna and low capacitance makes this device ideal for use on NFC antenna ciruits, RF signal lines, and FM antennas in portable devices. Package Dimension Schematic & Pin Configuration 0.600 0.220 0.300 1 0.160 0.355 BSC 2 0.250 SLP0603P2X3F (Bottom View) RClamp2451ZA 1 of 8 www.semtech.com Final Datasheet Rev 3.1 Semtech Revision Date 5/17/2017Absolute Maximum Rating Rating Symbol Value Units Peak Pulse Power (tp = 8/20s) P 32 W PK Peak Pulse Current (tp = 8/20s) I 4 A PP (1) ESD per IEC 61000-4-2 (Air) 18 V kV (1) ESD ESD per IEC 61000-4-2 (Contact) 14 O Operating Temperature T -40 to +85 C J O Storage Temperature T -55 to +150 C STG O Electrical Characteristics (T=25 C unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units Reverse Stand-Off Voltage V Pin 1 to 2 or Pin 2 to 1 24 V RWM Breakdown Voltage V I = 10 A 25.5 27.5 31 V BR BR Reverse Leakage Current I V = 24V <1 50 nA R RWM I = 1A, tp = 1.2/50s (Voltage), 8/20s 2 PP Clamping Voltage V 4.5 7 C (Current) Combination Waveform, R = 12 S V I = 4A, tp = 1.2/50s (Voltage), 8/20s 2 PP Clamping Voltage V 5.5 8 C (Current) Combination Waveform, R = 12 S I = 4A, tp = 0.2/100ns 5 3 ESD Clamping Voltage V V C I = 16A, tp = 0.2/100ns 7 3,4 Dynamic Resistance R tp = 0.2/100ns 0.16 DYN Junction Capacitance C V = 0V, f = 1MHz 0.35 0.45 pF J R Notes: (1) ESD gun return path connected to Ground Reference Plane (GRP) (2) Measured using a 1.2/50s voltage, 8/20s current combination waveform, R = 12 . Clamping is defined as the peak voltage across the S device after the device snaps back to a conducting state. (3) Transmission Line Pulse Test (TLP) Settings: tp = 100ns, tr = 0.2ns, I and V averaging window: t = 70ns to t = 90ns. TLP TLP 1 2 (4) Dynamic resistance calculated from I = 4A to I = 16A. TLP TLP RClamp2451ZA 2 of 8 www.semtech.com Final Datasheet Rev 3.1 Semtech Revision Date 5/17/2017