RClamp3371ZC Femto Farad RailClamp 1-Line, 250fF ESD and EOS Protection PROTECTION PRODUCTS Description Features ESD and EOS Protection RClamp3371ZC is an ultra low capacitance ESD withstand voltage TM FemtoClamp ESD protection device specifically IEC 61000-4-2 (ESD) 17kV (air), 10kV (contact) designed to protect high-speed differential lines. It IEC 61000-4-4 (EFT) 40A (5/50ns) offers desirable characteristics for board level protection Ultra-Low capacitance: 0.25pF Maximum including fast response time, low operating and Very small PCB area clamping voltage, and no device degradation. Protects one high-speed data line Working voltage: 3.3V Low reverse leakage current: 50nA max at V =3.3V RClamp3371ZC features extremely good ESD protection R Large operating bandwidth: 13.5GHz characteristics highlighted by low peak ESD clamping Solid-state silicon-avalanche technology voltage, and high ESD withstand voltage (+/-10kV contact per IEC 61000-4-2). RClamp3371ZC has a Mechanical Characteristics maximum capacitance of 0.25pF allowing it to be used SLP0603P2X3J Package on Thunderbolt and USB 3.1 high speed lines. These Pb-Free, Halogen Free, RoHS/WEEE Compliant devices may also be used for EOS protection due to their Nominal Dimensions: 0.60 x 0.30 x 0.25 mm high peak pulse current capability (9A, tp = 8/20s). Lead Finish: NiAu Each device will protect one high-speed data line Marking : Marking Code operating up to 3.3 volts. Packaging : Tape and Reel Applications RClamp3371ZC is in a 2-pin SLP0603P2X3J package measuring 0.60 x 0.30 mm with a nominal height of USB 3.1 and USB 3.0 only 0.25mm. Leads are finished with NiAu. The small HDMI 1.4 and HDMI 2.0 USB Type-C package gives the designer the flexibility to protect Thunderbolt single lines in applications where arrays are not practical. HD-SDI 10GbE 6G/12G-SDI Nominal Dimensions Schematic and Pin Configuration 0.600 1 0.220 0.300 0.160 0.355 BSC 2 0.250 Nominal Dimensions in mm RClamp3371ZC (Bottom View) RClamp3371ZC 1 www.semtech.com Final Datasheet Rev 2.5 Semtech 4/16/2019 Proprietary & ConfidentialAbsolute Maximum Ratings Rating Symbol Value Units Peak Pulse Power (tp = 8/20s) P 65 W PK Peak Pulse Current (tp = 8/20s) I 9 A PP (1) ESD per IEC 61000-4-2 (Air) 17 V kV (1) ESD ESD per IEC 61000-4-2 (Contact) 10 O Operating Temperature T -40 to +85 C OP O Storage Temperature T -55 to +150 C STG O Electrical Characteristics (T=25 C unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units O O Reverse Stand-Off Voltage V -40 C to 85 C 3.3 V RWM O O Reverse Breakdown Voltage V I = 1mA -40 C to 85 C 5.5 8 10 V BR t O T = 25 C <5 50 Reverse Leakage Current I V = 3.3V nA R RWM O T = 85 C <5 150 I = 9A, tp = 1.2/50s (Voltage), 8/20s 2 PP Clamping Voltage V 5.4 7 V C (Current) Combination Waveform, R = 2 S 3 ESD Clamping Voltage V I = 4A, tp = 0.2/100ns (TLP) 3 C PP V 3 ESD Clamping Voltage V I = 16A, tp = 0.2/100ns (TLP) 4.6 C PP 3, 4 Dynamic Resistance R tp = 0.2/100ns (TLP) 0.14 Ohms DYN O Junction Capacitance C V = 0V, f = 1MHz T = 25 C 0.23 0.25 pF J R Cutoff Frequency F -3dB 13.5 GHz C Notes: (1): ESD gun return path connected to Ground Reference Plane (GRP). (2): Measured using a 1.2/50s voltage, 8/20s current combination waveform, R = 2 Ohms. Clamping is defined as the peak voltage across S the device after the device snaps back to a conducting state. (3): Transmission Line Pulse Test (TLP) Settings: tp = 100ns, tr = 0.2ns, I and V averaging window: t = 70ns to t = 90ns. TLP TLP 1 2 (4): Dynamic resistance calculated from I = 4A to I = 16A TLP TLP RClamp3371ZC 2 www.semtech.com Final Datasheet Rev 2.5 Semtech 4/16/2019 Proprietary & Confidential