RClamp7534P Ultra Low Capacitance RailClamp 4-Line ESD Protection PROTECTION PRODUCTS Description Features RClamp7534P is a high performance TVS array aimed ESD protection for high-speed data lines to at simultaneously protecting 4 signal lines from IEC 61000-4-2 (ESD) 25kV (air), 20kV (contact) IEC 61000-4-5 (Lightning) 4A (8/20s) overvoltage events caused by ESD, CDE (Cable Discharge IEC 61000-4-4 (EFT) 40A (5/50ns) Events) and EFT (electrical fast transients). RClamp7534P Package design optimized for high speed lines features an extremely low typical capacitance of 0.19pF Protects four high-speed lines and is designed to protect high speed interfaces such as Low capacitance: 0.19pF Typical (I/O to Ground) HDMI 2.0, Ethernet, and USB 3.0. Low ESD clamping voltage Low dynamic resistance: 1.0 Ohm (Typ) Low leakage current RCamp7534P is a bi-directional device designed to Solid-state silicon-avalanche technology provide extremely low clamping voltage for both positive and negative ESD pulses. With a typical dynamic Mechanical Characteristics resistance of 1.0 Ohm, the RClamp7534P turns on quickly during overvoltage events to protect sensitive systems. SGP2010N5 Package (2.0 x 1.0 x 0.50mm) Pb-Free, Halogen Free, RoHS/WEEE Compliant Lead Finish: NiPdAu RClamp7534P is in a 5-pin SGP2010N5 package Marking : Marking Code measuring 2.0 x 1.0mm with a nominal height of Packaging : Tape and Reel 0.50mm. The leads have a nominal pin-to-pin pitch of 0.40mm. Flow- through package design simplifies PCB Applications layout and maintains signal integrity on high-speed HDMI 2.0 lines. The combination of low peak ESD clamping, low USB 3.1 dynamic resistance, and innovative package design Display Port 1.2 enables this device to provide the highest level of ESD Thunderbolt protection. 1G / 2.5G / 5G /10G Ethernet V-By-One MHL Nominal Dimensions Schematic 2.00 1 2 1.00 Pin 3 0.40 BSC GND 0.60 Nominal Dimensions in mm RClamp7534P 1 www.semtech.com Final Datasheet Rev 4.0 Semtech Octorber 21, 2015Absolute Maximum Ratings Rating Symbol Value Units Peak Pulse Current (tp = 8/20s) I 4 A PP (1) ESD per IEC 61000-4-2 (Contact) 20 V kV (1) ESD ESD per IEC 61000-4-2 (Air) 25 O Operating Temperature T -40 to +85 C J O Storage Temperature T -55 to +150 C STG O Electrical Characteristics (T=25 C unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units Reverse Stand-Off Voltage V Any I/O to GND 5 V RWM Reverse Breakdown Voltage V I = 1mA, Any I/O to GND 6.5 9.7 11.5 V BR BR Reverse Leakage Current I V = 5V, Any I/O to GND 5 100 nA R RWM I = 1A, tp = 8/20s 15 PP Clamping Voltage V V C I = 4A, tp = 8/20s 25 PP 2 ESD Clamping Voltage V I = 4A, tp = 0.2/100ns (TLP) 14 V C 2 ESD Clamping Voltage V I = 16A, tp = 0.2/100ns (TLP) 24 V C 2, 3 Dynamic Resistance R tp = 0.2/100ns (TLP) 1.0 Ohms DYN Junction Capacitance C V = 0V, f = 1MHz 0.19 0.22 pF J R Notes: (1) ESD gun return path connected to Ground Reference Plane (GRP) (2) Transmission Line Pulse Test (TLP) Settings: tp = 100ns, tr = 0.2ns, I and V averaging window: t = 70ns to t = 90ns. TLP TLP 1 2 (3) Dynamic resistance calculated from I = 4A to I = 16A TLP TLP RClamp7534P 2 www.semtech.com Final Datasheet Rev 4.0 Semtech Octorber 21, 2015