UCLAMP3312T.TCT Semtech

uClamp3312T Low Voltage Clamp for Gigabit Ethernet PROTECTION PRODUCTS PROTECTION PRODUCTS - MicroClamp Features Description High ESD withstand Voltage: +/-30kV (Contact/Air) The Clamp 3312T TVS diode is specifically designed per IEC 61000-4-2 to meet the performance requirements of Gigabit Able to withstand over 1000 ESD strikes per IEC Ethernet interfaces. They are designed to protect 61000-4-2 Level 4 sensitive PHY chips from damage or upset due to Flow-through design simplifies layout electrostatic discharge (ESD), lightning, electrical fast transients (EFT), and cable discharge events (CDE). Protects two line pairs Low reverse current: 10nA typical (VR=3.3V) The Clamp3312T is constructed using Semtechs low voltage EPD process technology. The EPD process Low variation in capacitance vs. bias voltage: provides low operating voltages with significant reduc- 1.3pF Typical (VR = 0 to 3.3V) tions in leakage current and capacitance over silicon- Working voltage: 3.3V avalanche diode processes. The device features low Solid-state silicon-avalanche technology variation in capacitance over bias for stable operation Mechanical Characteristics on GbE lines. This means the Clamp3312T will introduce zero traffic frame errors on GbE interfaces SLP2010N8T package o up to a PHY temperature of 120 C (100M Cat 5/5e Pb-Free, Halogen Free, RoHS/WEEE Compliant Cable). The Clamp3312T also features high surge Nominal Dimensions: 2.0 x 1.0 x 0.4 mm capability and is designed to be placed between the Lead Finish: NiPdAu magnetics and the PHY chip. In this configuration, the Molding compound flammability rating: UL 94V-0 device can withstand intra-building lightning surges per Marking: Marking code Telcordia GR-1089. Packaging: Tape and Reel The Clamp3312T is in a 8-pin SLP2010N8T package. It measures 2.0 x 1.0 x 0.4mm. The leads are spaced Applications at a pitch of 0.5mm and are finished with lead-free 10/100/1000 Ethernet NiPdAu. Each device will protect two line pairs operat- Integrated magnetics/RJ-45 connectors ing at 3.3 volts. It gives the designer the flexibility to LAN/WAN Equipment protect multiple lines in applications where space is at Security Cameras a premium. The small size and easy layout of the Industrial Controls uClamp3312T make it ideal for use in RJ-45 connec- tors with integrated magnetics. Notebooks & Desktop Computers Typical Application Schematic & PIN Configuration TPTPTP111+++ RJRJRJ---444555 CoCoConnnnnneeeccctttooorrr 1 TPTPTP111--- TPTPTP222+++ 111 222 333 TPTPTP222--- 444 2 TPTPTP333+++ 555 666 777 TPTPTP333--- 888 TPTPTP444+++ TPTPTP444--- GBE Integrated Magnetics Module SLP2010N8T www.semtech.com Revision 4/25/2010 1uClamp3312T PROTECTION PRODUCTS Absolute Maximum Rating Rlating Seymbo Vsalu Unit PPeak Pulse Power (tp = 8/20s) 1s00 Watt pk M)aximum Peak Pulse Current (tIp = 8/20s 1s0 Amp pp ESD per IEC 61000-4-2 (Air) V +/- 30 kV ESD ESD per IEC 61000-4-2 (Contact) +/- 30 OTperating Temperature -C40 to +85 J STtorage Temperature -C55 to +150 STG o Electrical Characteristics (T=25 C) Plarameter SsymboCmondition MlinimuTmypicaMsaximu Unit RVeverse Stand-Off Voltage 3V.3 RWM PVunch-Through Voltage I=52A 38. 33. 4V. PT PT SVnap-Back Voltage I=850mA2V. SB SB RIeverse Leakage Current V=13.3V 05.0 0A.0 R RWM CVlamping Voltage I=61A, tp = 8/20s 5V. C PP CVlamping Voltage I=110A, tp = 8/20s 1V C PP Variation in capacitance with Pins 1, 8 to 2, 7 and 1F.3 p 1 reverse bias pins 3, 6 to 4, 5 VR = 0 to 2.5V f = 1MHz Pins 1, 8 to 2, 7 and pins 3, 6 to 4, 5 VR = 2.5V, f = 1MHz I/O pin to Gnd 46.5 pF JCunction Capacitance V = 0V, f = 1MHz j R Notes: 1) This parameter guaranteed by design and characterization and is not production tested www.semtech.com 2010 Semtech Corp. 2