uClamp6514P 65V Clamp 4-Line, Surge & ESD Protection PROTECTION PRODUCTS Description Features H igh ESD Withstand Voltage Clamp T VS diodes are designed to protec t sensitive IEC 61000-4-2 (ESD) +/-8kV (contac t) elec tronics from damage or latch-up due to ESD. Protec ts up to Four VBus Lines They feature large cross-sec tional area junc tions for Flow-Through Pack age conduc ting high transient cur rents. They offer desirable M inimum Breakdown Voltage: 65V charac ter istics for board level protec tion including fast Low reverse cur rent: <10nA t ypical ( VR=60V ) response time, low operating and clamping voltage, and S olid-State Silicon-Avalanche Technology no device degradation. Mechanical Characteristics Clamp6514P is in a 10-pin SGP2510P8 pack age SGP2510P8 Pack age measur ing 2.5 x 1.0mm with a nominal height of only Pb -Free, Halogen Free, R oHS/WEEE Compliant 0.60mm. Leads are finished with lead-free N iPdAu. Each Nominal Dimensions: 2.5 x 1.0 x 0.60 mm Lead Finish: N iPdAu line features a minimum breakdown voltage of 65V. This M ar k ing : M ar k ing Code + Date Code device gives the designer flexibilit y to replace multiple Pack aging : Tape and R eel single line devices in space constrained applications. Flow through pack age design simplifies PCB layout. Applications uClamp6514P may be used to meet the ESD immunit y Chip - On- Glass (COG) Panels requirements of IEC 61000-4-2. The combination of high VBus Protec tion ESD surge capabilit y and innovative pack age design LCD Televisions makes them ideal for use in applications such as LCD OLED Panels Televisions, monitors, and industr ial equipment. S et Top B ox I ndustr ial Equipment Nominal Dimensions Schematic 2.50 Pin 1 Pin 2 Pin 4 Pin 5 12 1.00 0.50 BSC 0.60 Pin 3, 8 Nominal Dimensions in mm 4-Line, Bidirectional uClamp6514P 1 www.semtech.com Final Datasheet Rev 3.0 Semtech May 27, 2015Absolute Maximum Ratings Rating Symbol Value Units Peak Pulse Power P 240 W PK Peak Pulse Cur rent (tp = 8/20s) I 2 A PP (1) ESD per IEC 61000-4-2 (Contac t) V 8 kV ESD O Operating Temperature T -25 to +85 C J O Storage Temperature T -55 to +150 C STG O Electrical Characteristics (T=25 C unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units Pins 1, 2, 4, and 5 O O R everse Stand- O ff Voltage V -25 C to 85 C 60 V R WM to Pins 3 & 8 I = 1mA BR O O R everse Breakdown Voltage V Pins 1, 2, 4, and 5 -25 C to 85 C 65 75 85 V BR to Pins 3 & 8 O V = 60V T = 25 C <10 100 nA R WM R everse Leak age Cur rent I Pins 1, 2, 4, and 5 R O T = 85 C <10 150 nA to Pins 3 & 8 I = 2A, tp = 8/20s PP 2 Pins 1, 2, 4, and 5 Clamping Voltage V 105 120 V C to Pins 3 & 8 V = 0V, f = 1MH z R O Junc tion Capacitance C Pins 1, 2, 4, and 5 T = 25 C 8.5 10.5 pF J to Pins 3 & 8 Notes: (1) Measured with a 40dB attenuator, 50 Ohm scope input impedance, 2GHz bandwidth. ESD gun return path connected to Ground Refer- ence Plane (GRP) (2) Measured using a 1.2/50us voltage, 8/20us current combination waveform. Clamping is defined as the peak voltage across the device after the device snaps back to a conducting state. (3) Transmission Line Pulse Test (TLP) Settings: tp = 100ns, tr = 0.2ns, I and V averaging window: t = 70ns to t = 90ns. TLP TLP 1 2 (4) Dynamic resistance calculated from I = 4A to I = 16A TLP TLP uClamp6514P 2 www.semtech.com Final Datasheet Rev 3.0 Semtech May 27, 2015