1N6626 thru 1N6631
Standard
SENSITRON ___
UULLTTRRAAFFAASSTT RREECCTTIIFFIIEERRSS
SEMICONDUCTOR
TECHNICAL DATA
A V AI L A B L E AS
DATA SHEET 5077, REV. B.1
1N, J AN , J AN T X, J ANT XV
J AN S
J AN EQ U I V AL EN T *
SJ * , SX* , SV*
SS
Standard Recovery Rectifiers
Qualified per MIL-PRF-19500/590
DESCRIPTION:
This voidless hermetically sealed standard recovery rectifier diode series is military qualified per
MIL-PRF-19500/590 and is targeted for space, commerical and military aircraft, military vehicles,
shipboard markets and all high reliability applications.
FEATURES / BENEFITS: MAXIMUM RATINGS
o
Hermetic, non-cavity glass package Operating and Storage Temperature: -65 C to
o
Category I Metallurgically bonded +175 C
o o
Parts are hot solder dipped Junction Temperature: -65 C to +155 C
JAN/ JANTX/ JANTXV available per MIL-PRF-
19500/590
ELECTRICAL CHARACTERISTICS
Rating Symbol Condition Max Units
WORKING PEAK REVERSE VOLTAGE
1N6626, U, US 200
1N6627, U ,US 400
1N6628, U, US V 600 Volts
RWM
1N6629, U, US 800
1N6630 ,U, US 900
ICONDUCTO1NR 6631, U, US 1000
AVERAGE RECTIFIED FORWARD CURRENT
o 2.3
1N6626 thru 1N6628 I T = 75 C Amps
o L
1.8
1N6629 thru 1N6631
TECHNICAL DATA
AVERAGE RECTIFIED FORWARD CURRENT
4.0
o
DATA SHEET 5077, REV. B
1N6626U, US thru 1N6628U, US I T = 110 C Amps
o EC
2.8
1N6629U, US thru 1N6631U, US
PEAK FORWARD SURGE CURRENT
1N6626, U, US thru 1N6630,U, US I T =8.3ms 75 A(pk)
FSM p
1N6631, U, US 60
MAXIMUM REVERSE CURRENT
o
1N6626, U, US thru 1N6630,U, US I @ V T = 25 C 2.0 Amps
R RWM j
1N6631, U, US 4.0
MAXIMUM REVERSE CURRENT
o
1N6626, U, US thru 1N6630,U, US I @ V T = 150 C 500 Amps
R RWM j
1N6631, U, US 600
*Sensitron equivalent diodes are manufactured and screened to MIL-PRF-19500 flow and guidelines starting from
wafer fabrication through assembly and testing using our internal specification.
2013 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681
Phone (631) 586 7600 Fax (631) 242 9798 www.sensitron.com sales@sensitron.com 1N6626 thru 1N6631
Standard
SENSITRON ___
UULLTTRRAAFFAASSTT RREECCTTIIFFIIEERRSS
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 5077, REV. B.1
Rating Symbol Condition Max Units
MAX. PEAK FORWARD VOLTAGE (PULSED)
I =4A 1.50
F
1N6626, U, US thru 1N6628,U, US
V I =3A 1.70 Volts
FM F
1N6629,U, US to 1N6630,U, US
I =2A 1.95
F
1N6631, U, US
PEAK RECOVERY CURRENT
I =2A,
1N6626, U, US thru 1N6628,U, US F 3.5
I A(pk)
RM
1N6629,U, US to 1N6630,U, US 100A/ 4.2
1N6631, U, US 5.0
MAXIMUM REVERSE RECOVERY TIME
1N6626, U, US thru 1N6628,U, US I =0.5A 30
F
T ns
rr
1N6629,U, US to 1N6630,U, US I =1.0A 50
RM
1N6631, U, US 60
FORWARD RECOVERY VOLTAGE
1N6626, U, US thru 1N6628,U, US I =1A 8
F
V Volts
FRM
1N6629,U, US to 1N6630,U, US t =12ns 12
r
1N6631, U, US 20
THERMAL RESISTANCE (Axial) o
R L=.375 C/W
JL
1N6626 thru 1N6631 22
THERMAL RESISTANCE (MELF)
o
L=0 C/W
R
JC
1N6626U, US thru 1N6631U, US 6.5
GRAPHS
2013 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681
Phone (631) 586 7600 Fax (631) 242 9798 www.sensitron.com sales@sensitron.com