1N916B ON Semiconductor

DATA SHEET www.onsemi.com Small Signal Diode 1N91x, 1N4x48, FDLL914, FDLL4x48 DO 35 Cathode is denoted with a black band ORDERING INFORMATION Part Number Marking Package Packing Method Cathode Band 1N914 914 DO204AH (DO35) Bulk 1N914T50A 914 DO204AH (DO35) Ammo 1N914TR 914 DO204AH (DO35) Tape and Reel SOD80 1N914ATR 914A DO204AH (DO35) Tape and Reel LL 34 THE PLACEMENT OF THE EXPANSION GAP 1N914B 914B DO204AH (DO35) Bulk HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL 1N914BTR 914B DO204AH (DO35) Tape and Reel 1N916 916 DO204AH (DO35) Bulk 1N916A 916A DO204AH (DO35) Bulk 1N916B 916B DO204AH (DO35) Bulk SOD80 COLOR BAND MARKING 1N4148 4148 DO204AH (DO35) Bulk DEVICE 1ST BAND 1N4148TA 4148 DO204AH (DO35) Ammo FDLL914 BLACK FDLL914A BLACK FDLL914B BLACK 1N4148T26A 4148 DO204AH (DO35) Ammo FDLL4148 BLACK FDLL4448 BLACK 1N4148T50A 4148 DO204AH (DO35) Ammo -1st band denotes cathode terminal 1N4148TR 4148 DO204AH (DO35) Tape and Reel and has wider width 1N4148T50R 4148 DO204AH (DO35) Tape and Reel 1N4448 4448 DO204AH (DO35) Bulk 1N4448TR 4448 DO204AH (DO35) Tape and Reel FDLL914 Black SOD80 Tape and Reel FDLL914A Black SOD80 Tape and Reel FDLL914B Black SOD80 Tape and Reel FDLL4148 Black SOD80 Tape and Reel FDLL4148D87Z Black SOD80 Tape and Reel FDLL4448 Black SOD80 Tape and Reel FDLL4448D87Z Black SOD80 Tape and Reel Semiconductor Components Industries, LLC, 2002 1 Publication Order Number: August, 2021 Rev. 5 1N914/D1N91x, 1N4x48, FDLL914, FDLL4x48 ABSOLUTE MAXIMUM RATINGS (Values are at T = 25C unless otherwise noted) (Note 1) A Rating Symbol Value Unit Maximum Repetitive Reverse Voltage V 100 V RRM Average Rectified Forward Current I 200 mA O DC Forward Current I 300 mA F Recurrent Peak Forward Current I 400 mA f Nonrepetitive Peak Forward Surge Current Pulse Width = 1.0 s I 1.0 A FSM Pulse Width = 1.0 s 4.0 A Storage Temperature Range T 65 to +200 C STG Operating Junction Temperature Range T 55 to +175 C J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are limiting values above which the serviceability of the diode may be impaired. THERMAL CHARACTERISTICS Parameter Symbol Max Unit Power Dissipation P 500 mW D Thermal Resistance, JunctiontoAmbient 300 C R JA ELECTRICAL CHARACTERISTICS (Values are at T = 25C unless otherwise noted) (Note 2) A Symbol Parameter Conditions Min Max Unit V Breakdown Voltage 100 V I = 100 A R R I = 5.0 A 75 V R V Forward Voltage 914B / 4448 I = 5.0 mA 0.62 0.72 V F F 916B I = 5.0 mA 0.63 0.73 V F 914 / 916 / 4148 I = 10 mA 1.0 V F 914A / 916A I = 20 mA 1.0 V F 916B I = 20 mA 1.0 V F 914B / 4448 I = 100 mA 1.0 V F I Reverse Leakage V = 20 V 0.025 A R R V = 20 V, T = 150C 50 A R A V = 75 V 5.0 A R C Total Capacitance 916/916A/916B/4448 V = 0, f = 1.0 MHz 2.0 pF T R 914/914A/914B/4148 V = 0, f = 1.0 MHz 4.0 pF R t Reverse Recovery Time I = 10 mA, V = 6.0 V (600 mA) 4.0 ns rr F R I = 1.0 mA, R = 100 rr L Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Nonrecurrent square wave P = 8.3 ms. W www.onsemi.com 2