X-On Electronics has gained recognition as a prominent supplier of 1SS193,LF Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. 1SS193,LF Diodes - General Purpose, Power, Switching are a product manufactured by Toshiba. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

1SS193,LF Toshiba

1SS193,LF electronic component of Toshiba
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Part No.1SS193,LF
Manufacturer: Toshiba
Category: Diodes - General Purpose, Power, Switching
Description: Toshiba Diodes - General Purpose, Power, Switching Hi Spd Switch Diode 0.1A 80V VR
Datasheet: 1SS193,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0291 ea
Line Total: USD 87.3 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0396
9000 : USD 0.0353
24000 : USD 0.0346
45000 : USD 0.0316
99000 : USD 0.0304

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.2832
10 : USD 0.2727

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0291

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.639
10 : USD 0.527
100 : USD 0.1167
500 : USD 0.0738
1000 : USD 0.05
3000 : USD 0.0408
9000 : USD 0.0343
24000 : USD 0.033
45000 : USD 0.0303

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0495
9000 : USD 0.0397
24000 : USD 0.0381
45000 : USD 0.033
99000 : USD 0.0295

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0381

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0381

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0503
9000 : USD 0.0394
45000 : USD 0.0346
99000 : USD 0.0304

   
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Product Category
RoHS - XON
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We are delighted to provide the 1SS193,LF from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1SS193,LF and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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1SS193 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS193 Unit: mm Ultra High Speed Switching Application AEC-Q101 Qualified (Note1) Small package : SC-59 Low forward voltage : V = 0.9V (typ.) F (3) Fast reverse recovery time : t = 1.6ns (typ.) rr Small total capacitance : C = 0.9pF (typ.) T Note1: For detail information, please contact to our sales. Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 85 V RM Reverse voltage V 80 V R Maximum (peak) forward current I 300 mA FM Average forward current I 100 mA O JEDEC TO236MOD Surge current (10ms) I 2 A FSM JEITA SC-59 Power dissipation P 150 mW 2-3F1S TOSHIBA Weight: 12 mg (typ.) Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I =1mA 0.60 F (1) F Forward voltage V I = 10mA 0.72 V F (2) F V I = 100mA 0.90 1.20 F (3) F I V = 30V 0.1 R (1) R Reverse current A I V = 80V 0.5 R (2) R Total capacitance C V = 0 V, f = 1MH 0.9 3.0 pF T R z Reverse recovery time t I = 10mA (Fig.1) 1.6 4.0 ns rr F Start of commercial production 1982-05 1 2017-10-19 1SS193 Marking Fig.1 Reverse recovery time (trr) test circuit 2 2017-10-19

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4
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