1SS250(TE85L,F) Toshiba

1SS250 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS250 Unit: mm High Voltage, High Speed Switching Application Low forward voltage : V = 0.90 V (typ.) F (2) Fast reverse recovery time : t = 60 ns (max) rr Small total capacitance : C = 1.5 pF (typ.) T Small package : SC59 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 250 V RM Reverse voltage V 200 V R Maximum (peak) forward current I 300 mA FM Average forward current I 100 mA O Surge current (10 ms) I 2 A FSM JEDEC TO 236MOD P (Note 1, 3) 200 D Power dissipation mW JEITA SC5 9 P (Note 2) 150 D TOSHIBA 2 3F1S T (Note 1) 150 j Junction temperature C Weight: 12 mg (typ.) T (Note 2) 125 j T (Note 1) 55 to 150 stg Storage temperature range C T (Note 2) 55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: For devices with the ordering part number ending in LF(T. Note 2: For devices with the ordering part number in other than LF(T. 2 Note 3: Mounted on a FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu pad: 0.8 mm 3) Start of commercial production 1984-05 2017-2021 2021-06-25 1 Toshiba Electronic Devices & Storage Corporation 1SS250 Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 10 mA 0.72 1.00 F (1) F Forward voltage V V I = 100 mA 0.90 1.20 F (2) F I V = 50 V 0.1 R (1) R Reverse current A I V = 200 V 1.0 R (2) R C V = 0 V, f = 1 MHz 1.5 3.0 Total capacitance T R pF Reverse recovery time t I = 10 mA (Fig.1) 10 60 ns rr F Marking Fig.1 Reverse recovery time (t ) test circuit rr 2017-2021 2021-06-25 2 Toshiba Electronic Devices & Storage Corporation