1SS196(TE85L,F) Toshiba

1SS196 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS196 Ultra High Speed Switching Application Unit: mm AEC-Q101 Qualified (Note1) Small package: SC-59 Low forward voltage: V = 0.90 V (typ.) F (3) Fast reverse recovery time: t = 1.6 ns (typ.) rr Small total capacitance: C = 0.9 pF (typ.) T Note1: For detail information, please contact our sales. Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 85 V RM Reverse voltage V 80 V R Maximum (peak) forward current I 300 mA FM Average forward current I 100 mA O Surge current (10ms) I 2 A FSM P (Note 2, 4) 200 D Power dissipation mW P (Note 3) 150 D T (Note 2) 150 j JEDEC TO-236MOD Junction temperature C T (Note 3) 125 JEITA SC-59 j TOSHIBA 2-3F1S T (Note 2) 55 to 150 stg Storage temperature C Weight: 12 mg (typ.) T (Note 3) 55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: For devices with the ordering part number ending in LF(T. Note 3: For devices with the ordering part number in other than LF(T. 2 Note 4: Mounted on a FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu pad: 0.8 mm 3) Start of commercial production 1982-05 2017-2021 2021-06-25 1 Toshiba Electronic Devices & Storage Corporation 1SS196 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit V I = 1 mA 0.60 F (1) F Forward voltage V I = 10 mA 0.72 V F (2) F V I = 100 mA 0.90 1.20 F (3) F I V = 30 V 0.1 R (1) R Reverse current A I V = 80 V 0.5 R (2) R Total capacitance C V = 0 V, f = 1 MHz 0.9 3.0 pF T R Reverse recovery time t I = 10 mA (Fig.1) 1.6 4.0 ns rr F Marking Fig.1 Reverse Recovery Time (t ) Test Circuit rr 2017-2021 2021-06-25 2 Toshiba Electronic Devices & Storage Corporation