1SS193S,LF Toshiba

1SS193 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS193 Unit: mm Ultra High Speed Switching Application AEC-Q101 Qualified (Note1) Small package : SC-59 Low forward voltage : V = 0.9V (typ.) F (3) Fast reverse recovery time : t = 1.6ns (typ.) rr Small total capacitance : C = 0.9pF (typ.) T Note1: For detail information, please contact to our sales. Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 85 V RM Reverse voltage V 80 V R Maximum (peak) forward current I 300 mA FM Average forward current I 100 mA O JEDEC TO236MOD Surge current (10ms) I 2 A FSM JEITA SC-59 Power dissipation P 150 mW 2-3F1S TOSHIBA Weight: 12 mg (typ.) Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I =1mA 0.60 F (1) F Forward voltage V I = 10mA 0.72 V F (2) F V I = 100mA 0.90 1.20 F (3) F I V = 30V 0.1 R (1) R Reverse current A I V = 80V 0.5 R (2) R Total capacitance C V = 0 V, f = 1MH 0.9 3.0 pF T R z Reverse recovery time t I = 10mA (Fig.1) 1.6 4.0 ns rr F Start of commercial production 1982-05 1 2017-10-19 1SS193 Marking Fig.1 Reverse recovery time (trr) test circuit 2 2017-10-19