1SS184(TE85L,F) Toshiba

1SS184 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS184 Unit: mm Ultra High-Speed Switching Applications z Small package: SC-59 z Low forward voltage: V = 0.9 V (typ.) F (3) z Fast reverse recovery time: t = 1.6 ns (typ.) rr z Small total capacitance: C = 0.9 pF (typ.) T Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Maximum (peak) reverse voltage V 85 V RM Reverse voltage V 80 V R Maximum (peak) forward current I 300* mA FM Average forward current I 100* mA O Surge current (10 ms) I 2* A FSM Power dissipation P 150 mW Junction temperature T 125 C j Storage temperature T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high JEDEC TO-236MOD temperature/current/voltage and the significant change in JEITA SC-59 temperature, etc.) may cause this product to decrease in the TOSHIBA 1-3G1F reliability significantly even if the operating conditions (i.e. operating Weight: 0.012 g (typ.) temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Unit rating. Total rating = unit rating 1.5. Electrical Characteristics (Ta = 25 C) Test Characteristics Symbol Test Condition Min Typ. Max Unit Circuit V I = 1 mA 0.60 F (1) F Forward voltage V V I = 10 mA 0.72 F (2) F V I = 100 mA 0.90 1.20 F (3) F I V = 30 V 0.1 R (1) R Reverse current A I V = 80 V 0.5 R (2) R Total capacitance C V = 0, f = 1 MHz 0.9 3.0 pF T R Reverse recovery time t I = 10 mA (Fig.1) 1.6 4.0 ns rr F Marking Start of commercial production 1982-03 1 2014-03-01 1SS184 REVERSE VOLTAGE V (V) R Fig.1 Reverse Recovery Time (t ) Test Circuit rr 2 2014-03-01 REVERSE CURRENT I R (A)