X-On Electronics has gained recognition as a prominent supplier of 1SS187T5LFT Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. 1SS187T5LFT Diodes - General Purpose, Power, Switching are a product manufactured by Toshiba. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

1SS187T5LFT Toshiba

1SS187T5LFT electronic component of Toshiba
1SS187T5LFT Toshiba
1SS187T5LFT Diodes - General Purpose, Power, Switching
1SS187T5LFT  Semiconductors

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See Product Specifications
Part No. 1SS187T5LFT
Manufacturer: Toshiba
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching Diode
Datasheet: 1SS187T5LFT Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
6000: USD 0.0676 ea
Line Total: USD 405.6 
Availability - 0
MOQ: 6000  Multiples: 6000
Pack Size: 6000
Availability Price Quantity
0
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 6000
Multiples : 6000
6000 : USD 0.0676
9000 : USD 0.06
24000 : USD 0.0574
45000 : USD 0.0536

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Forward Continuous Current
Reverse Voltage
Forward Voltage Drop
Reverse Current Ir
Factory Pack Quantity :
Height
Length
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Vr - Reverse Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 1SS187T5LFT from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1SS187T5LFT and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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1SS187 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS187 Unit: mm Ultra High Speed Switching Application AEC-Q101 Qualified (Note1) Small package : SC-59 Low forward voltage : V = 0.92 V (typ.) F (3) Fast reverse recovery time : t = 1.6 ns (typ.) rr Small total capacitance : C = 2.2 pF (typ.) T Note1: For detail information, please contact our sales. Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 85 V RM Reverse voltage V 80 V R Maximum (peak) forward current I 300 mA FM Average forward current I 100 mA O Surge current (10ms) I 2 A FSM Power dissipation P (Note 2, 4) 200 mW D JEDEC TO-236MOD P (Note 3) 150 D JEITA SC-59 Junction temperature T (Note 2) 150 C 2-3F1S j TOSHIBA T (Note 3) 125 Weight: 12 mg (typ.) j Storage temperature T (Note 2) 55 to 150 C stg T (Note 3) 55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: For devices with the ordering part number ending in LF(T. Note 3: For devices with the ordering part number in other than LF(T. 2 Note 4: Mounted on a FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu pad: 0.8 mm 3) Start of commercial production 1982-06 2017-2021 2021-06-25 1 Toshiba Electronic Devices & Storage Corporation 1SS187 Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ Max Unit V I =1 mA 0.61 F (1) F Forward voltage V I = 10 mA 0.74 V F (2) F V I = 100 mA 0.92 1.20 F (3) F I V = 30 V 0.1 R (1) R Reverse current A I V = 80 V 0.5 R (2) R Total capacitance C V = 0 V, f = 1 MHz 2.2 4.0 pF T R Reverse recovery tme t I = 10 mA (Fig.1) 1.6 4.0 ns rr F Marking Fig.1 Reverse recovery time (t ) test circuit rr 2017-2021 2021-06-25 2 Toshiba Electronic Devices & Storage Corporation

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4
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