FastRecoveryDiode Single OUTLINE Unitmm Package1F D1FL40U 400V1.5A SMD trr25ns Feature SmallSMD LowNoise trr=25ns Web Fordetailsoftheoutlinedimensions,refertoourwebsite.Asforthe marking,refertothespecificatioMarking,TerminalConnectio. RATINGS AbsoluteMaximumRatings Tl25 Item Symbol Conditions Ratings Unit Tstg 55150 StorageTemperature Tj 150 OperationJunctionTemperature VRM 400 V MaximumReverseVoltage 1ms VRSM 430 V RepetitivePeakSurgeReverseVoltage Pulsewidth1ms 50HzTa25 0.75 50Hzsinewave,Resistanceload,Ta=25COnglass-epoxysubstrate 50HzTa25 Io 1.0 A AverageRectifiedForwardCurrent 50Hzsinewave,Resistanceload,Ta=25COnaluminasubstrate 50HzTl103 1.5 50Hzsinewave,Resistanceload,Tl=103C 50Hz1Tj25 IFSM 30 A PeakSurgeForwardCurrent 50Hzsinewave,Non-repetitive1cyclepeakvalue,Tj=25C ElectricalCharacteristics Tl25 MAX VF IF1.0A, 1.2 V ForwardVoltage Pulsemeasurement MAX IR VR400V, 10 A ReverseCurrent Pulsemeasurement MAX trr I0.5A,I1A,0.25I 25 ns F R R ReverseRecoveryTime TYP Cj f1MHz,V10V 11 pF R JunctionCapacitance MAX jl 23 Junctiontolead MAX 108 /W ThermalResistance Junctiontoambient,Onaluminasubstrate ja MAX 157 Junctiontoambient,Onglass-epoxysubstrate J532-P2010.06 www.shindengen.co.jp/product/semi/ 4U 00 00D1FL40U CHARACTERISTICDIAGRAMS Forward Voltage Forward Power Dissipation Peak Surge Forward Current Capability l l l l Ta-Io Ta-Io Derating Curve Ta-Io Derating Curve Ta-Io Junction Capacitance l Sinewave50Hz 50Hzsinewaveisusedformeasurements. J532-P2010.06 www.shindengen.co.jp/product/semi/