TBAV99,LM Toshiba

TBAV99 Switching Diodes Silicon Epitaxial Planar TBAV99TBAV99TBAV99TBAV99 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Ultra-High-Speed Switching 2. 2. 2. 2. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Anode 1 2: Cathode 2 3: Cathode1 / Anode 2 SOT23 Start of commercial production 2014-12 2015-2018 2018-07-19 1 Toshiba Electronic Devices & Storage Corporation Rev.3.0TBAV99 3. 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 )) 3. 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 )) aa aa Characteristics Symbol Note Rating Unit Peak reverse voltage V 85 V RM Reverse voltage V 80 R Peak forward current I (Note 1) 300 mA FM Average rectified current I (Note 1) 100 O Power dissipation P 150 mW D Power dissipation P (Note 2) 320 mW D Non-repetitive peak forward surge current I (Note 1), (Note 3) 2 A FSM Junction temperature T 125 j Storage temperature T -55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Unit rating. Total rating = Unit rating 70 % Note 2: Device mounted on a 25.4 mm 25.4 mm 1.6 mm FR-4 glass epoxy board (Cu pad: 0.42 mm2 3) Note 3: Measured with a 10 ms pulse. 4. 4. 4. 4. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage V I = 1 mA 0.715 V F(1) F V I = 10 mA 0.855 F(2) F V I = 50 mA 1.0 F(3) F V I = 150 mA 1.25 F(4) F Reverse current I V = 25 V 30 nA R(1) R I V = 80 V 0.5 A R(2) R Total capacitance C V = 0 V, f = 1 MHz 1.5 pF t R Reverse recovery time t I = 10 mA 4.0 ns rr F See Fig. 4.1. Fig. Fig. 4.14.1 Reverse recovery time (tReverse recovery time (trrrr) Test circuit) Test circuit Fig. Fig. 4.14.1 Reverse recovery time (tReverse recovery time (trrrr) Test circuit) Test circuit 2015-2018 2018-07-19 2 Toshiba Electronic Devices & Storage Corporation Rev.3.0