TBC847 Bipolar Transistors Silicon NPN Epitaxial Type TBC847TBC847TBC847TBC847 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Low-Frequency Amplifiers 2. 2. 2. 2. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1. Base 2. Emitter 3. Collector SOT23 3. 3. 3. 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Rating Unit Collector-base voltage V 60 V CBO Collector-emitter voltage V 50 V CEO Emitter-base voltage V 6 V EBO Collector current (DC) I 150 mA C Collector current (pulsed) I 200 CP Base current I 30 mA B Collector power dissipation (Note 1) P 320 mW C Junction temperature T 150 j Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device mounted on a 25.4 mm 25.4 mm 1.6 mm FR4 glass epoxy board (Cu pad: 0.42 mm2 3) Start of commercial production 2016-05 2016 Toshiba Corporation 2016-08-01 1 Rev.1.0TBC847 4. 4. 4. 4. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Note Test Condition Min Typ. Max Unit Collector cut-off current I V = 30 V, I = 0 mA 30 nA CBO CB E Emitter cut-off current I V = 6 V, I = 0 mA 0.1 A EBO EB C DC current gain h (Note 1) V = 5 V, I = 10 A 280 FE CE C V = 5 V, I = 2 mA 200 290 450 CE C Collector-emitter saturation V I = 10 mA, I = 0.5 mA 0.06 0.2 V CE(sat) C B voltage I = 100 mA, I = 5 mA 0.17 0.4 C B Base-emitter saturation voltage V I = 10 mA, I = 0.5 mA 0.7 V BE(sat) C B I = 100 mA, I = 5 mA 0.9 C B Base-emitter voltage V I = 2 mA, V = 5 V 0.58 0.66 0.7 V BE C CE I = 10 mA, V = 5 V 0.77 C CE Transition frequency f V = 5 V, I = 10 mA, 100 MHz T CE C f = 100 MHz Collector output capacitance C V = 10 V, I = 0 mA, f = 1 MHz 3.5 pF ob CB E Emitter input capacitance C V = 0.5 V, I = 0 mA, f = 1 MHz 11 pF ib EB C Noise figure NF V = 6 V, I = 100 A, 1.0 10 dB CE C f = 1 kHz, R = 10 k G Note 1: h classification: B rank FE 5. 5. 5. 5. MarkingMarkingMarkingMarking 2016 Toshiba Corporation 2016-08-01 2 Rev.1.0