Bridge Diode Single In-line Package OUTLINE Unit : mm Package2S D2SB60 Weight : 2.0gtyp. 600V 1.5A SIP D2SB IFSM 60 68 Feature Thin-SIP Large IFSM Web For details of outline dimensions, refer to our web site or the Semiconductor Short Form Catalog. As for the marking, refer to the specification Marking, Terminal Connection. RATINGS RATINGS Absolute Maximum Ratings l D2SB60 Type No. Symbol Item Conditions Unit Storage Temperature Operation Junction Temperature Maximum Reverse Voltage Average Rectified Forward Current 50Hz sine wave, Resistance load, On glass-epoxy substrate, Ta = 25 Peak Surge Forward Current 50Hz sine wave , Non-repetitive 1cycle peak value, Tj = 25 Current Squared Time Electrical Characteristics l Pulse measurement, per diode Forward Voltage Pulse measurement, per diode Reverse Current l Junction to Lead Thermal Resistance Junction to Ambient J534-1 58Thin SIP Bridge D2SB60 CHARACTERISTIC DIAGRAMS Sine wave 50Hz 50Hz sine wave is used for measurements. Typical Semiconductor products generally have characterristic variation. Typical is a statistical average of the devices ability. J534-1 59