X-On Electronics has gained recognition as a prominent supplier of SIF4N65F MOSFET across the USA, India, Europe, Australia, and various other global locations. SIF4N65F MOSFET are a product manufactured by SI. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

SIF4N65F SI

SIF4N65F electronic component of SI
Images are for reference only
See Product Specifications
Part No.SIF4N65F
Manufacturer: SI
Category: MOSFET
Description: TO-220FPL-TU-HF MOSFETs ROHS
Datasheet: SIF4N65F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.2617 ea
Line Total: USD 1.31

Availability - 0
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
0
Ship by Wed. 24 Jul to Mon. 29 Jul
MOQ : 1
Multiples : 1
1 : USD 0.3799
10 : USD 0.3056
50 : USD 0.2736
100 : USD 0.2338
500 : USD 0.2055
1000 : USD 0.1949

   
Manufacturer
Product Category
Category
Rohs
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SIF4N65F from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIF4N65F and other electronic components in the MOSFET category and beyond.

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ENThe SIF4N65F with TO-220FPL-TU-HF MOSFETs ROHS manufactured by SIEN is a single isolation field-effect transistor (FET) featuring a maximum drain-source voltage of 500V and a continuous drain current of 4A. It is designed for use in switching applications, such as power supply, motor, solenoid drivers, digital input/output circuitry, and other industrial applications. It is made with RoHS compliant material, which ensures that its manufacture is in line with environmental regulations. The lead frame of the MOSFET has been designed to provide maximum thermal dissipation and reduce thermal resistance, thus enabling for efficient heat dissipation and improved performance.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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