X-On Electronics has gained recognition as a prominent supplier of SVF2N60MJ MOSFETs across the USA, India, Europe, Australia, and various other global locations. SVF2N60MJ MOSFETs are a product manufactured by Silan. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SVF2N60MJ Silan

SVF2N60MJ electronic component of Silan
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See Product Specifications
Part No.SVF2N60MJ
Manufacturer: Silan
Category: MOSFETs
Description: MOSFET N Trench 600V 2A 4V @ 250uA 4.2 O @ 1A,10V TO-251 (I-PAK) RoHS
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
100: USD 0.1086 ea
Line Total: USD 10.86 
Availability - 0
MOQ: 100  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ : 100
Multiples : 1
100 : USD 0.1086
500 : USD 0.1045
1000 : USD 0.1045
2550 : USD 0.1004

   
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We are delighted to provide the SVF2N60MJ from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SVF2N60MJ and other electronic components in the MOSFETs category and beyond.

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The SVF2N60MJ MOSFET from Silan is a three-terminal device with an I-PAK (TO-251) package, compliant with RoHS (Restriction of Hazardous Substances) regulations. This N-channel MOSFET operates in the 600V voltage range with a 2A current carrying capability and has a maximum on-state resistance of 4.2 Ohms. The device features a 4V @ 250uA gate-to-source threshold voltage and 10V gate-to-source maximum voltage. It is designed for efficient switching applications due to its trench gate structure.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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