SLG59M301V SLG59M301V 2 An Ultra-small 3 mm , 8.5 m, 4 A, Internally-protected Integrated Power Switch General Description Pin Configuration The SLG59M301V is a high performance 8.5 m, 4 A single-channel nFET integrated power switch which can operate with a 2.5 V to 5.5 V V supply to switch power rails DD from as low as 0.85 V up to the supply voltage. The 1 8 VDD GND SLG59M301V incorporates two-level overload current 2 7 ON CAP protection, thermal shutdown protection, and inrush current control which can easily be adjusted by a small external 6 D 3 S capacitor. 5 Using a proprietary MOSFET design, the SLG59M301V D 4 S achieves a stable 8.5 m RDS across a wide input voltage ON range. In addition, the SLG59M301Vs package also exhibits 8-pin FC-TDFN low thermal resistance for high-current operation using Dialogs advanced assembly technology. (Top View) Fully specified over the -40 C to 85 C temperature range, the SLG59M301V is packaged in a space-efficient, low thermal resistance, RoHS-compliant 1.5 mm x 2.0 mm STDFN Applications package. Notebook Power Rail Switching Tablet Power Rail Switching Features Smartphone Power Rail Switching 1.5 x 2.0 mm FC-TDFN 8L package (2 fused pins for drain and 2 fused pins for source) Logic level ON pin capable of supporting 0.85 V CMOS Logic User selectable ramp rate with external capacitor 8.5 m RDS while supporting 4 A ON Discharges load when off Two Over Current Protection Modes Short Circuit Current Limit Active Current Limit Over Temperature Protection Pb-Free / Halogen-Free / RoHS compliant Operating Temperature: -40 C to 85 C Operating Voltage: 2.5 V to 5.5 V Block Diagram 4 A 8.5 m D S C C IN VDD LOAD +2.5 V to 5.5 V Charge Pump Linear Ramp Control CAP C SLEW 4 nF Over Current and Over Temperature Protection ON CMOS Input 0.85 to 5.5 V GND Datasheet Revision 1.15 5-Nov-2018 Page 1 of 15 2018 Dialog Semiconductor CFR0011-120-01SLG59M301V 2 An Ultra-small 3 mm , 8.5 m, 4 A, Internally-protected Integrated Power Switch Pin Description Pin Pin Name Type Pin Description VDD supplies the power for the operation of the power switch and internal control circuitry. 1VDD PWR Bypass the VDD pin to GND with a 0.1 F (or larger) capacitor. A low-to-high transition on this pin initiates the operation of the SLG59M301Vs state machine. ON is a CMOS input with ON V < 0.3 V and ON V > 0.85 V thresholds. While IL IH there is an internal pull-down circuit to GND (~4 M), connect this pin directly to a 2 ON Input general-purpose output (GPO) of a microcontroller, an application processor, or a system controller. Drain terminal connection of the n-channel MOSFET (2 pins fused for V ). Connect at least D 3, 4 D MOSFET a low-ESR 0.1 F capacitor from this pin to ground. Capacitors used at V should be rated D at 10 V or higher. Source terminal connection of the n-channel MOSFET (2 pins fused for V ). Connect a S 5, 6 S MOSFET low-ESR capacitor from this pin to ground and consult the Electrical Characteristics table range. Capacitors used at V should be rated at 10 V or higher. for recommended C LOAD S A low-ESR, stable dielectric, ceramic surface-mount capacitor connected from CAP pin to GND sets the V slew rate and overall turn-on time of the SLG59M301V. For best S 7 CAP Input performance C value should be 1.5 nF and voltage level should be rated at 10 V or SLEW higher. 8 GND GND Ground connection. Connect this pin to system analog or power ground plane. Ordering Information Part Number Type Production Flow SLG59M301V FC-TDFN 8L Industrial, -40 C to 85 C SLG59M301VTR FC-TDFN 8L (Tape and Reel) Industrial, -40 C to 85 C Datasheet Revision 1.15 5-Nov-2018 Page 2 of 15 2018 Dialog Semiconductor CFR0011-120-01