Si550 REVISION D VOLTAGE-CONTROLLED CRYSTAL OSCILLATOR (VCXO) 10 MHZ TO 1.4 GHZ Features Available with any frequency from Internal fixed crystal frequency Si5602 10 to 945 MHz and select ensures high reliability and low frequencies to 1.4 GHz aging Available CMOS, LVPECL, 3rd generation DSPLL with LVDS, and CML outputs superior jitter performance (0.5 ps) 3.3, 2.5, and 1.8 V supply options 3x better temperature stability than Industry-standard 5 x 7 mm SAW-based oscillators package and pinout Excellent PSRR performance Pb-free/RoHS-compliant Ordering Information: Applications See page 10. SONET/SDH Low-jitter clock generation xDSL Optical modules Pin Assignments: 10 GbE LAN/WAN Clock and data recovery See page 9. Description (Top View) The Si550 VCXO utilizes Silicon Laboratories advanced DSPLL circuitry to provide a low-jitter clock at high frequencies. The Si550 supports any V V C 1 6 DD frequency from 10 to 945 MHz and select frequencies to 1417 MHz. Unlike traditional VCXOs, where a different crystal is required for each output OE 2 5 CLK frequency, the Si550 uses one fixed crystal to provide a wide range of output frequencies. This IC-based approach allows the crystal resonator to provide GND 3 4 CLK+ exceptional frequency stability and reliability. In addition, DSPLL clock synthesis provides superior supply noise rejection, simplifying the task of generating low-jitter clocks in noisy environments typically found in communication systems. The Si550 IC-based VCXO is factory-configurable for a wide variety of user specifications, including frequency, supply voltage, output format, tuning slope, and temperature stability. Specific configurations are factory programmed at time of shipment, thereby eliminating the long lead times associated with custom oscillators. Functional Block Diagram V DD Any-Frequency Fixed 10 MHz1.4 GHz CLK+ Frequency DSPLL XO CLK Clock Synthesis ADC Vc OE GND Rev. 1.1 4/13 Copyright 2013 by Silicon Laboratories Si550Si550 1. Electrical Specifications Table 1. Recommended Operating Conditions Parameter Symbol Test Condition Min Typ Max Units 1 V 3.3 V option 2.97 3.3 3.63 V Supply Voltage DD 2.5 V option 2.25 2.5 2.75 V 1.8 V option 1.71 1.8 1.89 V Supply Current I Output enabled DD LVPECL 130 120 CML 108 117 mA 99 LVDS 108 90 CMOS 98 tristate mode 60 75 mA 2 Output Enable (OE) V 0.75 x V V IH DD V 0.5 V IL Operating Temperature Range T 40 85 C A Notes: 1. Selectable parameter specified by part number. See 3.Ordering Informatio on page 10 for further details. 2. OE pin includes a 17 k resistor to V . DD Table 2. V Control Voltage Input C Parameter Symbol Test Condition Min Typ Max Units 1,2,3 Control Voltage Tuning Slope K 10 to 90% of V 33 V DD 45 90 ppm/V 135 180 356 4 Control Voltage Linearity L BSL 5 1 +5 % VC Incremental 10 5 +10 % Modulation Bandwidth BW 9.3 10.0 10.7 kHz V Input Impedance Z 500 k C VC Nominal Control Voltage V f V /2 V CNOM O DD Control Voltage Tuning Range V 0V V C DD Notes: 1. Positive slope selectable option by part number. See 3.Ordering Informatio on page 10. 2. For best jitter and phase noise performance, always choose the smallest K that meets the applications minimum APR V requirements. See AN266: VCXO Tuning Slope (K ), Stability, and Absolute Pull Range (APR) for more information. V 3. K variation is 10% of typical values. V 4. BSL determined from deviation from best straight line fit with V ranging from 10 to 90% of V . Incremental slope C DD determined with V ranging from 10 to 90% of V . C DD 2 Rev. 1.1