Product Information

SE120120G

SE120120G electronic component of SINO-IC

Datasheet
MOSFET N Trench 120V 129A 4.5V @ 250uA 6.1 mΩ @ 60A,10V TO-263 RoHS

Manufacturer: SINO-IC
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.7542 ea
Line Total: USD 1.75

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

SE120120G
SINO-IC

1 : USD 1.0739
10 : USD 0.9451
30 : USD 0.9235
100 : USD 0.8936

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation Max
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The SE120120G is a MOSFET-N-Trench type semiconductor with a voltage rating of 120V, current rating of 129A, gate threshold voltage of 4.5V, gate leakage current of 250uA, and RDSON of 6.1mOhm @ 60A. It is a RoHS compliant TO-263 package, and is manufactured by SINO-IC.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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