X-On Electronics has gained recognition as a prominent supplier of SE30P50 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SE30P50 MOSFETs are a product manufactured by SINO-IC. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SE30P50 SINO-IC

SE30P50 electronic component of SINO-IC
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See Product Specifications
Part No.SE30P50
Manufacturer: SINO-IC
Category: MOSFETs
Description: MOSFET P Trench 30V 50A 2.2V @ 250uA 7mΩ @ 20A,10V DFN 5x6 RoHS
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8764 ea
Line Total: USD 0.88 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SE30P50 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SE30P50 and other electronic components in the MOSFETs category and beyond.

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The SE30P50 is a 30V, 50A metal-oxide-semiconductor field-effect transistor (MOSFET) with a P-Trench structure. It features a drain-source voltage of 2.2V with a 250uA current at 7mΩ, and a drain-source voltage of 10V with a 20A current. The device is packaged in a RoHS-compliant dual flat no-lead (DFN) package with a 5x6 surface mounting configuration. It is manufactured by SINO-IC.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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