X-On Electronics has gained recognition as a prominent supplier of SE4607 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SE4607 MOSFETs are a product manufactured by SINO-IC. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SE4607 SINO-IC

Name: SE4607
Brand: SINO-IC
SKU: SE4607_SINO-IC
Availability: InStock
Rating: 5 (11 reviews)

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See Product Specifications

Part No.	SE4607
Manufacturer:	SINO-IC
Category:	MOSFETs
Description:	MOSFET N & P Trench 20V 4.2A,2.8A 1.2V @ 250uA 45 mÎ© @ 2.8A,4.5V SOIC-8_150mil RoHS
Datasheet:	SE4607 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

10: USD 0.0644 ea
Line Total: USD 0.64

Availability - 8451
Ship by Fri. 06 Dec to Wed. 11 Dec

MOQ: 10 Multiples: 10
Pack Size: 10

SE4607 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

8451

Ship by Fri. 06 Dec to Wed. 11 Dec

MOQ : 10
Multiples : 10

10 : USD 0.0644
100 : USD 0.0567
300 : USD 0.0529
1000 : USD 0.05
4000 : USD 0.0462
8000 : USD 0.045

Specifications

Manufacturer
SINO-IC SINO-IC

Product Category
MOSFETs MOSFETs

Category
MOSFET MOSFET

Rohs
y y

Package
SOIC - 8 150MIL SOIC - 8 150MIL

Brand Category
Sino-Ic Sino-Ic

Fet Type
n amp; p trench n amp; p trench

Drain To Source Voltagevdss
20 V 20 V

Continuous Drain Current Id @ 25°C
4.2 A , 2.8 A 4.2 A , 2.8 A

Vgsth Max @ Id
1.2 V @ 250ua 1.2 V @ 250ua

Rds On Max @ Id Vgs
45 m @ 2.8a,4.5v 45 m @ 2.8a,4.5v

Power Dissipation Max
1.2 W 1.2 W

Drain Source Voltage Vdss
20 V 20 V

Continuous Drain Current Id
- -

Drain Source On Resistance Rdson@Vgs Id
20 mOhms @4.5V , 2.8A;100 mOhms @4.5V , 2.8A 20 mOhms @4.5V , 2.8A;100 mOhms @4.5V , 2.8A

Power Dissipation Pd
1.2 W 1.2 W

Gate Threshold Voltage Vgsth@Id
- -

Reverse Transfer Capacitance Crss@Vds
- -

Type
1PCSN - Channelamp;1PCSP - Channel 1PCSN - Channelamp;1PCSP - Channel

Input Capacitance Ciss@Vds
- -

Total Gate Charge Qg@Vgs
- -

Operating Temperature
- 55 C ~ + 150 C @ (Tj) - 55 C ~ + 150 C @ (Tj)

Notes:- Show Stocked Products With Similar Attributes.

SE4607 Alternative Parts

We are delighted to provide the SE4607 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SE4607 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SINO-IC SE4607 is an N and P-channel Field Effect Transistor (FET) that operates with 20V, 4.2A and 2.8A gate-source voltage. It is built with a Trench structure and has a threshold voltage of 1.2V at 250uA, a typical drain-source resistance of 45m? @ 2.8A, and a gate-source voltage rating of 4.5V. It is packaged in an 8-pin small outline integrated circuit (SOIC) with a 150 mil body size and is RoHS compliant.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
8451 Ship by Fri. 06 Dec to Wed. 11 Dec MOQ : 10 Multiples : 10	10 : USD 0.0644 100 : USD 0.0567 300 : USD 0.0529 1000 : USD 0.05 4000 : USD 0.0462 8000 : USD 0.045

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