Product Information

SE6016B

SE6016B electronic component of SINO-IC

Datasheet
MOSFET N Trench 60V 16A 2.5V @ 250uA 25 mΩ @ 20A,10V TO-252 RoHS
Manufacturer: SINO-IC
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2613 ea
Line Total: USD 0.26

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

SE6016B
SINO-IC

1 : USD 0.2484
10 : USD 0.2016
30 : USD 0.1814
100 : USD 0.1565
500 : USD 0.1453
1000 : USD 0.1387

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The SE6016B with MOSFET N Trench is a 60V 16A device engineered with the highest level of precision by SINO-IC. It has 2.5V @ 250uA 25 mO @ 20A, 10V and a TO-252 package with RoHS compliance. This MOSFET is capable of providing maximum efficiency and reliability in demanding applications and is ideal for high power, high current designs. It also features low output capacitance and very low on-resistance, providing maximum performance and flexibility.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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