The SINO-IC SE60P20B is a MOSFET P Trench power device with a drain source voltage of up to 60V, drain current of up to 20A, gate source voltage of 2.5V, gate charge of 250uA, drain source on resistance of 33mOhms at 10A and 10V, and delivered in a TO-252 RoHS package. This device is suitable for use in a wide range of applications, such as motor drives, inverters, switch mode power supplies, consumer devices and automotive systems.