The SE8N65A is a metal-oxide-semiconductor field-effect transistor (MOSFET), designed and manufactured by SINO-IC. It is a high-voltage N-channel MOSFET that is housed in a TO-220F package and is RoHS compliant. This MOSFET is designed for applications such as switching regulators, motor control, switching relays, lamp control, and pulse transformers. It features a maximum breakdown voltage of 650 volts, a maximum drain current of 8 amps, and a maximum gate-source voltage of 20 volts. It is designed for use in industrial applications and is suitable for applications that require high voltage and high current ratings.