Preliminary SiT5002 80-220 MHz MEMS TCXO and VCTCXO The Smart Timing Choice The Smart Timing Choice Features Applications Any frequency between 80.000001 and 220 MHz accurate to 6 Ideal for telecom, networking, smart meter, GPS and wireless decimal places applications 100% pin-to-pin drop-in replacement to quartz-based (VC)TCXO Frequency stability as low as 5 ppm. Contact SiTime for tighter stability options Ultra low phase jitter: 0.5 ps (12 kHz to 20 MHz) Voltage control option with pull range from 12.5 ppm to 50 ppm LVCMOS/HCMOS compatible output Voltage control, standby, output enable or no connect modes Standard 4-pin packages: 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm Outstanding silicon reliability of 2 FIT, 10 times better than quartz Pb-free, RoHs and REACH compliant Electrical Characteristics Parameter Symbol Min. Typ. Max. Unit Condition Output Frequency Range f 80.000001 220 MHz Initial Tolerance F init -1.5 1.5 ppm At 25C after two reflows Stability Over Temperature F stab -5 +5 ppm Over operating temperature range at rated nominal power supply voltage and load. (see ordering codes on page 5) Contact SiTime for tighter stability options. Supply Voltage F vdd 0.05 ppm 10% Vdd (5% for Vdd = 1.8V) Output Load F load 0.1 ppm 10% of 15 pF load First year Aging F aging -2.5 +2.5 ppm 10-year Aging -4.0 +4.0 ppm 25C Operating Temperature Range T use -20 +70 C Extended Commercial -40 +85 C Industrial Supply Voltage Vdd 1.71 1.8 1.89 V Contact SiTime for any other supply voltage options. 2.25 2.5 2.75 V 2.52 2.8 3.08 V 2.70 3.0 3.3 V 2.97 3.3 3.63 V Pull Range PR 12.5, 25, 50 ppm Upper Control Voltage VC U Vdd-0.1 V All Vdds. Voltage at which maximum deviation is guaranteed. Control Voltage Range VC L 0.1 V Control Voltage Input Impedance Z vc 100 k Frequency Change Polarity Positive slope Control Voltage -3dB Bandwidth V BW 8 kHz Current Consumption Idd 31 33 mA No load condition, f = 20 MHz, Vdd = 2.5V, 2.8V or 3.3V. 29 31 mA No load condition, f = 20 MHz, Vdd = 1.8V. Vdd = 2.5V, 2.8V or 3.3V, OE = GND, output is Weakly Pulled OE Disable Current I OD 31 mA 30 mA Vdd = 1.8 V. OE = GND, output is Weakly Pulled Down Standby Current I std 70 A Vdd = 2.5V, 2.8V or 3.3V, ST = GND, output is Weakly Pulled Down. 10 A Vdd = 1.8V. ST = GND, output is Weakly Pulled Down. Duty Cycle DC 45 55 % All Vdds LVCMOS Rise/Fall Time Tr, Tf 1.5 2 ns LVCMOS option. Default rise/fall time, All Vdds, 10% - 90% Vdd. Output Voltage High VOH 90% Vdd OH = -7 mA, IOL = 7 mA, (Vdd = 3.3V, 3.0V) IOH = -4 mA, IOL = 4 mA, (Vdd = 2.8V, 2.5V) Output Voltage Low VOL 10% Vdd IOH = -2 mA, IOL = 2 mA, (Vdd = 1.8V) Input Voltage High VIH 70% Vdd Pin 1, OE or ST Input Voltage Low VIL 30% Vdd Pin 1, OE or ST Input Pull-up Impedance Z in 100 250 k SiTime Corporation 990 Almanor Avenue Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com Rev. 1.0 Revised November 12, 2015SiT5002 80-220 MHz MEMS TCXO and VCTCXO The Smart Timing Choice The Smart Timing Choice Electrical Characteristics (continued) Parameter Symbol Min. Typ. Max. Unit Condition Startup Time T start 10 ms Measured from the time Vdd reaches its rated minimum value OE Enable/Disable Time T oe 150 ns f = 80 MHz. For other frequencies, T oe = 100 ns + 3 cycles Resume Time T resume 6 10 ms Measured from the time ST pin crosses 50% threshold RMS Period Jitter T jitt 1.7 2 ps f = 10 MHz, Vdd = 2.5V, 2.8V or 3.3V 1.7 2 ps f = 10 MHz, Vdd = 1.8V RMS Phase Jitter (random) T phj 0.5 1 ps f = 10 MHz, Integration bandwidth = 12 kHz to 20 MHz, All Vdds Note: 1. All electrical specifications in the above table are measured with 15pF output load, Contact SiTime for higher drive options. Pin Configuration Pin Symbol Functionality V control Voltage control Top View 2 Output H or Open : specified frequency output Enable L: output is high impedance. Only output driver is disabled. 2 1 4 1VC/OE/ST/NC VC/OE/ST VDD H or Open : specified frequency output Standby L: output is low (weak pull down). Device goes to sleep mode. Supply current reduces to I std. NC No connect (input receiver off) 2 3 OUT 2 GND Power Electrical and case ground GND 3 CLK Output Oscillator output 4 VDD Power Power supply voltage Note: 2. A pull-up resistor of <10 k between OE/ ST pin and Vdd is recommended in high noise environment when the device operates in OE/ST mode. Absolute Maximum Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual perfor- mance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings. Parameter Min. Max. Unit Storage Temperature -65 150 C VDD -0.5 4 V Electrostatic Discharge 2000 V Soldering Temperature (follow standard Pb free soldering guidelines) 260 C Environmental Compliance Parameter Condition/Test Method Mechanical Shock MIL-STD-883F, Method 2002 Mechanical Vibration MIL-STD-883F, Method 2007 Temperature Cycle JESD22, Method A104 Solderability MIL-STD-883F, Method 2003 Moisture Sensitivity Level MSL1 260C Rev. 1.0 Page 2 of 6 www.sitime.com