SiT8008
Low Power Programmable Oscillator
The Smart Timing Choice
The Smart Timing Choice
Features Applications
Any frequency between 1 MHz and 110 MHz accurate to 6 decimal Ideal for DSC, DVC, DVR, IP CAM, Tablets, e-Books, SSD,
places GPON, EPON, etc
Operating temperature from -40C to 85C. Refer to SiT8918 and Ideal for high-speed serial protocols such as: USB, SATA, SAS,
SiT8920 for high temperature options Firewire, 100M / 1G / 10G Ethernet, etc.
Excellent total frequency stability as low as 20 PPM
Low power consumption of 3.6 mA typical
Programmable drive strength for improved jitter, system EMI
reduction, or driving large capacitive loads
LVCMOS/HCMOS compatible output
Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2,
7.0 x 5.0 mm x mm
Instant samples with Time Machine II and field programmable
oscillators
Pb-free, RoHS and REACH compliant
[1]
Electrical Characteristics
Parameter and Conditions Symbol Min. Typ. Max. Unit Condition
Frequency Range
Output Frequency Range f1 110 MHz
Frequency Stability and Aging
Frequency Stability F_stab -20 +20 PPM Inclusive of Initial tolerance at 25C, 1st year aging at 25C, and
variations over operating temperature, rated power supply
-25 +25 PPM
voltage and load (15 pF 10%).
-50 +50 PPM
Operating Temperature Range
Operating Temperature Range T_use -20 +70 C Extended Commercial
-40 +85 C Industrial
Supply Voltage and Current Consumption
Supply Voltage Vdd 1.62 1.8 1.98 V Contact SiTime for 1.5V support
2.25 2.5 2.75 V
2.52 2.8 3.08 V
2.7 3.0 3.3 V
2.97 3.3 3.63 V
2.25 3.63 V
Current Consumption Idd 3.8 4.5 mA No load condition, f = 20 MHz, Vdd = 2.8V, 3.0V, 3.3V, 2.25V to 3.63V
3.6 4.2 mA No load condition, f = 20 MHz, Vdd = 2.5V
3.4 3.9 mA No load condition, f = 20 MHz, Vdd = 1.8V
OE Disable Current I_OD 4 mA Vdd = 2.5V to 3.3V, OE = GND, output is Weakly Pulled Down
3.8 mA Vdd = 1.8V, OE = GND, output is Weakly Pulled Down
Standby Current I_std 2.6 4.3 A ST = GND, Vdd = 2.8V to 3.3V, Output is Weakly Pulled Down
1.4 2.5 A ST = GND, Vdd = 2.5V, Output is Weakly Pulled Down
0.6 1.3 A
ST = GND, Vdd = 1.8V, Output is Weakly Pulled Down
LVCMOS Output Characteristics
Duty Cycle DC 45 55 % All Vdds
Rise/Fall Time Tr, Tf 1 2 ns Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80%
1.3 2.5 ns Vdd =1.8V, 20% - 80%
2 ns Vdd = 2.25V - 3.63V, 20% - 80%
Output High Voltage VOH 90% Vdd IOH = -4 mA (Vdd = 3.0V or 3.3V)
IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOH = -2 mA (Vdd = 1.8V)
Output Low Voltage VOL 10% Vdd IOL = 4 mA (Vdd = 3.0V or 3.3V)
IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOL = 2 mA (Vdd = 1.8V)
Input Characteristics
Input High Voltage VIH 70% Vdd Pin 1, OE or ST
Input Low Voltage VIL 30% Vdd
Pin 1, OE or ST
Input Pull-up Impedence Z_in 87 100 k Pin 1, OE logic high or logic low, or ST logic high
2 M
Pin 1, ST logic low
Note:
1. All electrical specifications in the above table are specified with 15 pF output load at default drive strength and for all Vdd(s) unless otherwise stated.
SiTime Corporation 990 Almanor Avenue Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com
Rev. 1.11 Revised May 27, 2013SiT8008
Low Power Programmable Oscillator
The Smart Timing Choice
The Smart Timing Choice
[1]
Electrical Characteristics (continued)
Parameter and Conditions Symbol Min. Typ. Max. Unit Condition
Startup and Resume Timing
Startup Time T_start 5 ms Measured from the time Vdd reaches its rated minimum value
Enable/Disable Time T_oe 130 ns f = 110 MHz. For other frequencies, T_oe = 100 ns + 3 * cycles
Resume Time T_resume 5 ms Measured from the time ST pin crosses 50% threshold
Jitter
RMS Period Jitter T_jitt 1.76 3 ps f = 75 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V
1.78 3 ps f = 75 MHz, Vdd = 1.8V
RMS Phase Jitter (random) T_phj 0.5 0.9 ps f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz
1.3 2 ps f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz
Note:
1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated.
Pin Description
Pin Symbol Functionality
[2]
H or Open : specified frequency output
Top View
Output Enable
L: output is high impedance. Only output driver is disabled.
1
[2]
OE/ ST
H or Open : specified frequency output
Standby 1 4
L: output is low (weak pull down). Device goes to sleep mode. Supply OE/ST VDD
current reduces to I_std.
[3]
2 GND Power Electrical ground
3 OUT Output Oscillator output
[3] 2 3
GND OUT
4 VDD Power Power supply voltage
Notes:
2. A pull-up resistor of <10 k between OE/ ST pin and Vdd is recommended in high noise environment.
3. A capacitor value of 0.1 F between Vdd and GND is recommended.
Absolute Maximum
Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual perfor-
mance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter Min. Max. Unit
Storage Temperature -65 150 C
VDD -0.5 4 V
Electrostatic Discharge 2000 V
Soldering Temperature (follow standard Pb free soldering guidelines) 260 C
Junction Temperature 150 C
Thermal Consideration
JC, Bottom
Package JA, 4 Layer Board (C/W) JA, 2 Layer Board (C/W) (C/W)
7050 191 263 30
5032 97 199 24
3225 109 212 27
2520 117 222 26
2016 124 227 26
Environmental Compliance
Parameter Condition/Test Method
Mechanical Shock MIL-STD-883F, Method 2002
Mechanical Vibration MIL-STD-883F, Method 2007
Temperature Cycle JESD22, Method A104
Solderability MIL-STD-883F, Method 2003
Moisture Sensitivity Level MSL1 @ 260C
Rev. 1.11 Page 2 of 11 www.sitime.com