SiT8102 1 to 200 MHz High Performance Oscillator Features Benefits High frequency stability No crystal or load capacitors required 10 PPM, 15 PPM, 20 PPM Eliminates crystal qualification time 25 PPM, 50 PPM, 100 PPM Ultra-reliable start up and greater immunity from interfer- ence Extremely low RMS phase jitter (random) Replaces expensive single-ended SAW oscillators 0.5 ps (typical) More cost effective than quartz oscillators, quartz crystals Wide frequency range and clock ICs. 1 to 200 MHz Completely quartz-free Operating voltage 1.8, 2.5, 2.8V or 3.3 V Applications Other voltages up to 3.63 V (contact SiTime) Communications and Networking Applications Operating temperature range Consumer Electronics Applications Industrial, -40 to 85 C Automotive Applications Extended Commercial, -20 to 70 C Industrial Applications Commercial, 0 to 70 C Gigabit Ethernet Small footprint 10 Gigabit Ethernet 2.5 x 2.0 x 0.75 mm Fiber Channel 3.2 x 2.5 x 0.75 mm Ethernet 5.0 x 3.2 x 0.75 mm SATA/SAS 7.0 x 5.0 x 0.90 mm USB 2.0 All packages are Pb-free and ROHs compliant PCI-Express High drive option: 30pF load (contact factory) Block Diagram Pinout VDD OUT ST/OE 1 4 VDD High MEMS Performance Resonator Synthesizer GND 2 3 OUT GND ST/OE Pin Description Pin1 Pin No. Name Pin Description Pin 1 Functionality 1 OE ST/OE Standby/ Output Enable H or Open specified frequency output 2 GND Connect to Ground L: output is high impedance 3 OUT 1 to 200 MHz Programmed Clock output ST 4 VDD Connect to 1.8V / 2.5V / 2.8V / 3.3V H or Open specified frequency output L: output is low level (weak pull down) oscillation stops SiTime Corporation 990 Almanor Avenue Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com Rev. 1.10 Revised June 9, 2010 SiT8102 1 to 200 MHz High Performance Oscillator Description The SiT8102 is the next generation of the SiT8002 program- System reliability is also increased with the SiT8102 by elimi- mable oscillator with lower phase noise, lower jitter, and a nating the quartz crystal and improved immunity to the wider frequency range. SiTime oscillators are the smallest, environmental effects of vibration, shock, strain, and humidity. high-performance programmable oscillator available and are To order samples, go to www.sitime.com and click on Request suitable for use in high speed serial communications, Sample link. consumer, portable, industrial, automotive and computation. This oscillator is packaged in standard low-cost plastic and chip-scale IC packages. Absolute Maximum Ratings Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual perfor- mance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings. Absolute Maximum Table Parameter Min. Max. Unit Storage Temperature -65 150 C VDD -0.5 +3.66 V Electrostatic Discharge 2000 V Theta JA ( with copper plane on VDD and GND) 75 C/W Theta JC (with PCB traces of 0.010 inch to all pins) 24 C/W Soldering Temperature (follow standard Pb free soldering guidelines) 260 C Number of Program Writes 1 NA Program Retention over -40 to 125 C, Process, VDD (0 to 3.65V) 1,000+ years Operating Conditions Parameter Min. Typ. Max. Unit 1 Supply Voltages, VDD 2.97 3.3 3.63 V 2.52 2.8 3.08 V 2.25 2.5 2.75 V 1.7 1.8 1.9 V Commercial Operating Temperature 0 70 C Extended Commercial Operating Temperature -20 70 C Industrial Operating Temperature -40 85 C 2 Maximum Load Capacitance 15 pF Environmental Compliance Parameter Condition/Test Method Mechanical Shock MIL-STD-883F, Method 2002 Mechanical Vibration MIL-STD-883F, Method 2007 Temperature Cycle JESD22, Method A104 Solderability MIL-STD-883F, Method 2003 Moisture Sensitivity Level MSL1 260C Notes: 1. The 3.3V device can operate from 2.25V to 3.63V with higher output drive strength, however, the data sheet specifications cannot be guaranteed. Please contact factory for this option. 2. The output driver strength can be programmed to drive up to 50pF load. Please contact factory for this option. Rev. 1.10 Page 2 of 8 www.sitime.com