X-On Electronics has gained recognition as a prominent supplier of S34ML02G300TFI003 NAND Flash across the USA, India, Europe, Australia, and various other global locations. S34ML02G300TFI003 NAND Flash are a product manufactured by SkyHigh Memory. We provide cost-effective solutions for NAND Flash, ensuring timely deliveries around the world.

S34ML02G300TFI003 SkyHigh Memory

S34ML02G300TFI003 electronic component of SkyHigh Memory
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Part No.S34ML02G300TFI003
Manufacturer: SkyHigh Memory
Category: NAND Flash
Description: NAND Flash SLC,2Gb,16nm,3.3V,x8,0bit,TS048
Datasheet: S34ML02G300TFI003 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.829 ea
Line Total: USD 4.83 
Availability - 609
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
609
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 4.829
10 : USD 4.433
100 : USD 3.949
1000 : USD 3.443
5000 : USD 3.399
10000 : USD 3.333

   
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We are delighted to provide the S34ML02G300TFI003 from our NAND Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the S34ML02G300TFI003 and other electronic components in the NAND Flash category and beyond.

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S34ML01G3 S34ML02G3 1Gb, 2Gb, 3 V, x8 I/O, SLC NAND Flash Memory for Embedded Distinctive Characteristics Density NAND Flash Interface Open NAND Flash Interface (ONFI) 1.0 compliant 1 Gb/ 2 Gb Address, Data, and Commands multiplexed Architecture Input / Output Bus Width: 8 bits Supply voltage Page Size 3.3-V device: V = 2.7 V ~ 3.6 V CC 1 Gb: (2048 + 64) bytes 64-byte spare area Security 1 Gb: (2048 + 128) bytes 128-byte spare area 2 Gb: (2048 + 128) bytes 128-byte spare area One Time Programmable (OTP) area Serial number (unique ID) Block Size: 64 Pages Hardware program/erase disabled during power transition 1 Gb: 128 KB + 4 KB Volatile and Permanent Block Protection 1 Gb: 128 KB + 8 KB 2 Gb: 128 KB + 8 KB Electronic Signature Manufacturer ID: 01h Plane Size Device ID: follow industry standard for single and stacked die 1 Gb: 1024 blocks per plane or (128 MB + 4 MB) implementation 2 Gb: 1024 blocks per plane or (128 MB + 8 MB) Operating Temperature Device Size Industrial: 40C to 85C 1 Gb: 1 plane per device or 128 Mbyte Industrial Plus: 40C to 105C 2 Gb: 2 plane per device or 256 Mbyte Additional Features NAND Flash Interface Copy Back Program (S34ML02G3) Reset (FFh) command is required after power-on as a first Open NAND Flash Interface (ONFI) 1.0 compliant command Address, Data, and Commands multiplexed Performance Page Read / Program Reliability Read Page Time (t ): R 80,000 Program/Erase cycles (Typ) 45 s (Typ) / Single Plane 10 Year Data retention (Typ) 55 s (Typ) / Multi Plane Blocks 0-7 are good at the time of shipment Program time / Multiplane Program time: 350 s (Typ) Package Options Block Erase / Multiplane Erase Pb-free and low halogen Block Erase time: 4 ms (Typ) 48-Pin TSOP 12 20 1.2 mm 63-Ball BGA 9 11 1 mm SkyHigh Memory Limited SSuiuitte e 44440011-02,-02, 4444//FF OOne ne IIslslaanndd EEaastst,, www.skyhighmemory.com Document Number: 002-19206 Rev. C 18 Westlands Road Hong Kong Revised Nov. 23, 2021S34ML01G3 S34ML02G3 Contents 1. General Description..................................................... 3 7. Timing Diagrams......................................................... 40 1.1 Logic Diagram ....................................................... 4 7.1 Command Latch Cycle......................................... 40 1.2 Connection Diagram.............................................. 5 7.2 Address Latch Cycle ............................................ 40 1.3 Pin Description ...................................................... 6 7.3 Data Input Cycle Timing....................................... 41 1.4 Block Diagram ....................................................... 7 7.4 Data Output Cycle Timing 1.5 Array Organization ..................................................8 (CLE=L, WE =H, ALE=L, WP =H)...................... 41 1.6 Addressing ..............................................................9 7.5 Data Output Cycle Timing 1.7 Mode Selection.................................................... 10 (EDO Type, CLE=L, WE =H, ALE=L).................. 42 7.6 Page Read Operation........................................... 42 2. Bus Operation ............................................................ 11 7.7 Page Read Operation (Interrupted by CE )......... 43 2.1 Command Input................................................... 11 7.8 Page Read Operation Timing with CE Dont Care 2.2 Address Input ...................................................... 11 ............................................................................. 43 2.3 Data Input............................................................ 11 7.9 Page Program Operation ..................................... 44 2.4 Data Output......................................................... 11 7.10 User Spare Program ............................................ 45 2.5 Write Protect........................................................ 11 7.11 Small Data Input Guidelines................................. 45 2.6 Standby ............................................................... 11 7.12 Page Program Operation Timing with CE 3. Command Set............................................................. 12 Dont Care............................................................ 46 3.1 Page Read .......................................................... 13 7.13 Page Program Operation with Random 3.3 Page Program ..................................................... 14 Data Input............................................................. 46 3.5 Page Reprogram................................................. 15 7.14 Random Data Output In a Page........................... 47 3.6 Block Erase ......................................................... 16 3.8 Copy Back Program ............................................ 17 7.16 Block Erase Operation ......................................... 48 3.9 Read Status Register .......................................... 17 3.10 Read Status Enhanced ....................................... 18 7.18 Copy Back Read With Optional Data Readout..... 50 3.11 Read Status Register Field Definition ...................18 7.19 Copy Back Program Operation With Random 3.12 Reset.....................................................................19 Data Input............................................................. 50 3.13 Read ID .................................................................19 7.21 Read Status Register Timing ............................... 52 3.14 Read ONFI Signature.......................................... 20 7.22 Read Status Enhanced Timing.............................53 3.15 Read Parameter Page......................................... 20 7.23 Reset Operation Timing ....................................... 53 3.16 Read Unique ID................................................... 21 7.24 Read ID Operation Timing.................................... 53 3.17 One-Time Programmable (OTP) ......................... 22 3.18 Feature Operations ...............................................24 7.26 Read ONFI Signature Timing............................... 54 7.27 Read Parameter Page Timing.............................. 55 4. Security Features.........................................................27 7.28 Read Unique ID Timing........................................ 55 4.1 Volatile Block Protection (VBP) Overview .............27 7.29 OTP Entry Timing................................................. 56 4.2 Permanent Block Protection (PBP) Overview .......28 7.30 Legacy OTP Protection Timing ..........................56 7.31 PowerO n andD ataP rotectionT iming.....................56 5. Signal Descriptions ................................................... 34 7.32 WP Handling ...................................................... 58 5.1 Data Protection and Power On / Off Sequence... 34 5.2 Ready/Busy......................................................... 34 8. Physical Interface ....................................................... 59 5.3 Write Protect Operation.........................................35 8.1 Physical Diagram ................................................. 59 6. Electrical Characteristics............................................36 9. System Interface ......................................................... 61 6.1 Valid Blocks...........................................................36 10. Error Management ...................................................... 62 6.2 Absolute Maximum Ratings..................................36 10.1 System Bad Block Replacement...........................62 6.3 Recommended Operating Conditions ...................36 10.2 Bad Block Management ....................................... 63 6.4 AC Test Conditions ...............................................36 11. Ordering Information.................................................. 64 6.5 AC Characteristics.................................................38 12. Document History Page ............................................. 65 6.6 DC Characteristics ............................................... 38 6.7 Pin Capacitance ....................................................38 6.8 Thermal Resistance ..............................................39 6.9 Program / Erase Characteristics ..........................40 Document Number: 002-19206 Rev. C Page 2 of 65

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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