X-On Electronics has gained recognition as a prominent supplier of S34ML04G300TFI100 NAND Flash across the USA, India, Europe, Australia, and various other global locations. S34ML04G300TFI100 NAND Flash are a product manufactured by SkyHigh Memory. We provide cost-effective solutions for NAND Flash, ensuring timely deliveries around the world.

S34ML04G300TFI100 SkyHigh Memory

S34ML04G300TFI100 electronic component of SkyHigh Memory
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Part No.S34ML04G300TFI100
Manufacturer: SkyHigh Memory
Category: NAND Flash
Description: NAND Flash
Datasheet: S34ML04G300TFI100 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.785 ea
Line Total: USD 4.78 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 4.785
10 : USD 4.268
96 : USD 3.85
288 : USD 3.85
576 : USD 3.718
1056 : USD 3.597
2592 : USD 3.432
5088 : USD 3.366
10080 : USD 3.311

   
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We are delighted to provide the S34ML04G300TFI100 from our NAND Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the S34ML04G300TFI100 and other electronic components in the NAND Flash category and beyond.

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S34ML04G3 4 Gb, 3 V, 4K Page Size, x8 I/O, SLC NAND Flash Memory for Embedded Distinctive Characteristics Density Security 4 Gb One Time Programmable (OTP) area Serial Number (unique ID) Architecture Hardware program/erase disabled during power transition Input / Output Bus Width: 8 bits Volatile and Permanent Block Protection Page Size: Electronic Signature (4096 + 256) bytes 256-byte spare area Manufacturer ID: 01h Block size: 64 Pages Device ID: Follow industry standard for single and stacked 256 KB + 16 KB die implementation Plane Size 2048 blocks (512 MB + 32 MB) Operating Temperature Device Size Industrial: 40C to 85C 1 plane per device or 512 Mbyte Industrial Plus: 40C to 105C Additional Features NAND Flash Interface Copy Back Program Open NAND Flash Interface (ONFI) 1.0 compliant Reset (FFh) command is required after power-on as a first Address, Data, and Commands multiplexed command Supply Voltage 3.3-V Device: V = 2.7 V ~ 3.6 V CC Performance Reliability Page Read / Program Read Page Time (t ): R 80,000 Program / Erase cycles (Typ) 55 s (Typ) / Single Plane 10 Year Data retention (Typ) Program Time: 350 s (Typ) Blocks 0-7 are good at the time of shipment Block Erase Package Options Block Erase Time: 4 ms (Typ) Pb-free and low halogen 48-Pin TSOP 12 20 1.2 mm 63-Ball BGA 9 11 1 mm SkyHigh Memory Limited Suite 4401-02, 44/F One Island East, www.skyhighmemory.com Document Number: 002-19822 Rev. *M 18 Westlands Road Hong Kong Revised Nov. 13, 2019S34ML04G3 Contents 1. General Description..................................................... 3 7.1 Command Latch Cycle.................................................. 37 7.2 Address Latch Cycle..................................................... 37 1.1 Logic Diagram................................................................ 4 7.3 Data Input Cycle Timing................................................ 38 1.2 Connection Diagram ...................................................... 5 7.4 Data Output Cycle Timing (CLE=L, 1.3 Pin Description............................................................... 6 WE =H, ALE=L, WP =H)............................................. 38 1.4 Block Diagram................................................................ 7 7.5 Data Output Cycle Timing (EDO Type, 1.5 Array Organization......................................................... 7 CLE=L, WE =H, ALE=L) .............................................. 39 1.6 Addressing..................................................................... 8 7.6 Page Read Operation ................................................... 39 1.7 Mode Selection .............................................................. 9 7.7 Page Read Operation (Interrupted by CE ).................. 40 2. Bus Operation ............................................................ 10 7.8 Page Read Operation Timing with CE 2.1 Command Input ........................................................... 10 Dont Care..................................................................... 40 2.2 Address Input............................................................... 10 7.9 Page Program Operation.............................................. 41 2.3 Data Input .................................................................... 10 7.10 User Spare Program..................................................... 41 2.4 Data Output.................................................................. 10 7.11 Small Data Input Guidelines ......................................... 42 2.5 Write Protect ................................................................ 10 7.12 Page Program Operation Timing with CE 2.6 Standby........................................................................ 10 Dont Care..................................................................... 42 7.13 Page Program Operation with Random 3. Command Set............................................................. 11 Data Input ..................................................................... 42 3.1 Page Read................................................................... 12 7.14 Random Data Output In a Page ................................... 43 3.2 Page Program.............................................................. 12 7.15 Block Erase Operation.................................................. 43 3.3 Page Reprogram.......................................................... 12 7.16 Copy Back Read with Optional Data 3.4 Block Erase.................................................................. 14 Readout ........................................................................ 43 3.5 Copy Back Program..................................................... 14 7.17 Copy Back Program Operation With 3.6 Read Status Register................................................... 14 Random Data Input....................................................... 44 3.7 Read Status Enhanced................................................ 15 7.18 Read Status Register Timing........................................ 44 3.8 Read Status Register Field Definition.......................... 15 7.19 Read Status Enhanced Timing ..................................... 44 3.9 Reset............................................................................ 16 7.20 Reset Operation Timing................................................ 45 3.10 Read ID........................................................................ 16 7.21 Read ID Operation Timing ............................................ 45 3.11 Read ID2...................................................................... 17 7.22 Read ID2 Operation Timing .......................................... 45 3.12 Read ONFI Signature .................................................. 17 7.23 Read ONFI Signature Timing........................................ 46 3.13 Read Parameter Page ................................................. 17 7.24 Read Parameter Page Timing ...................................... 46 3.14 Read Unique ID ........................................................... 20 7.25 Read Unique ID Timing................................................. 46 3.15 One-Time Programmable (OTP).................................. 21 7.26 OTP Entry Timing ......................................................... 47 3.16 Feature Operations...................................................... 22 7.27 Legacy OTP Protection Timing..................................... 47 4. Security Features....................................................... 24 7.28 Power On and Data Protection Timing ......................... 47 4.1 Volatile Block Protection (VBP) Overview.................... 24 7.29 WP Handling............................................................... 49 4.2 Permanent Block Protection (PBP) Overview.............. 27 8. Physical Interface ....................................................... 50 5. Signal Descriptions ................................................... 30 8.1 Physical Diagram.......................................................... 50 5.1 Data Protection and Power On / Off Sequence ........... 30 9. System Interface ......................................................... 52 5.2 Ready/Busy.................................................................. 30 5.3 Write Protect Operation ............................................... 32 10. Error Management ...................................................... 53 10.1 System Bad Block Replacement................................... 53 6. Electrical Characteristics.......................................... 33 10.2 Bad Block Management................................................ 54 6.1 Valid Blocks ................................................................. 33 6.2 Absolute Maximum Ratings ......................................... 33 11. Ordering Information.................................................. 55 6.3 Recommended Operating Conditions.......................... 33 12. Document History....................................................... 57 6.4 AC Test Conditions...................................................... 33 6.5 AC Characteristics ....................................................... 34 6.6 DC Characteristics....................................................... 35 6.7 Pin Capacitance........................................................... 35 6.8 Thermal Resistance..................................................... 35 6.9 Program / Erase Characteristics.................................. 36 7. Timing Diagrams........................................................ 37 Document Number: 002-19822 Rev. *M Page 2 of 57

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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