S34MS01G2 S34MS02G2 S34MS04G2 1 Gbit/2 Gbit/4 Gbit SLC NAND Flash for Embedded Distinctive Characteristics Density Device size: 1 Gb / 2 Gb / 4 Gb 1 Gb: 1 plane per device or 128 MB 2 Gb: 2 planes per device or 256 MB Architecture 4 Gb: 2 planes per device or 512 MB Input / Output Bus Width: 8 bits / 16 bits Page size: NAND flash interface x8 Open NAND Flash Interface (ONFI) 1.0 compliant 1 Gb: (2048 + 64) bytes 64-byte spare area Address, Data, and Commands multiplexed 2 Gb / 4 Gb: (2048 + 128) bytes 128-byte spare area Supply voltage x16 1.8 V device: V = 1.7 V ~ 1.95 V CC 1 Gb: (1024 + 32) words 32-word spare area Security 2 Gb / 4Gb: (1024 + 64) words 64-word spare area One Time Programmable (OTP) area Block size: 64 Pages Serial number (unique ID) (Contact factory for support) x8 Hardware program/erase disabled during power transition 1 Gb: 128 KB + 4 KB Additional features 2 Gb / 4 Gb: 128 KB + 8 KB 2 Gb and 4 Gb parts support Multiplane Program and x16 Erase commands 1 Gb: (64k + 2k) words Supports Copy Back Program 2 Gb / 4 Gb: (64k + 4k) words 2 Gb and 4 Gb parts support Multiplane Copy Back Plane size: Program x8 Supports Read Cache 1 Gb: 1024 Blocks per Plane or (128 MB + 4 MB) 2 Gb: 1024 Blocks per Plane or (128 MB + 8 MB) Electronic signature 4 Gb: 2048 Blocks per Plane or (256 MB + 16 MB) Manufacturer ID: 01h x16 Operating temperature 1 Gb: 1024 Blocks per Plane or (64M + 2M) words Industrial: 40 C to 85 C 2 Gb: 1024 blocks per plane or (64M + 4M) words Industrial Plus: 40 C to 105 C 4 Gb: 2048 blocks per plane or (128M + 8M) words Performance Page Read / Program Reliability Random access: 25 s (Max) (S34MS01G2) 100,000 Program / Erase cycles (Typ) (with 4-bit ECC per 528 bytes (x8) or 264 words (x16)) Random access: 30 s (Max) (S34MS02G2, S34ML04G2) 10-year Data retention (Typ) Sequential access: 45 ns (Min) For one plane structure (1-Gb density) Program time / Multiplane Program time: 300 s (Typ) Block zero is valid and will be valid for at least 1,000 Block Erase (S34MS01G2) program-erase cycles with ECC Block Erase time: 3.0 ms (Typ) For two plane structures (2-Gb and 4-Gb densities) Block Erase / Multiplane Erase (S34MS02G2, S34MS04G2) Blocks zero and one are valid and will be valid for at Block Erase time: 3.5 ms (Typ) least 1,000 program-erase cycles with ECC Package options Pb-free and Low Halogen 48-Pin TSOP 12 20 1.2 mm 63-Ball BGA 9 11 1 mm 67-Ball BGA 8 6.5 1 mm (S34MS01G2, S34MS02G2) Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 002-03238 Rev. *E Revised June 09, 2017S34MS01G2 S34MS02G2 S34MS04G2 Contents 1. General Description...................................................... 3 5.7 Program / Erase Characteristics..................... 38 1.1 Logic Diagram .................................................. 4 6. Timing Diagrams......................................................... 39 1.2 Connection Diagram......................................... 5 6.1 Command Latch Cycle ................................... 39 1.3 Pin Description ................................................. 7 6.2 Address Latch Cycle ...................................... 40 1.4 Block Diagram .................................................. 8 6.3 Data Input Cycle Timing ................................. 40 1.5 Array Organization............................................ 9 6.4 Data Output Cycle Timing (CLE=L, WE =H, 1.6 Addressing...................................................... 11 ALE=L, WP =H)............................................. 41 1.6.1 S34MS01G211 6.5 Data Output Cycle Timing (EDO Type, CLE=L, 1.6.2 S34MS02G212 WE =H, ALE=L)............................................. 41 1.6.3 S34MS04G213 6.6 Page Read Operation..................................... 42 1.7 Mode Selection............................................... 14 6.7 Page Read Operation (Interrupted by CE ) ... 43 2. Bus Operation ............................................................. 15 6.8 Page Read Operation Timing with CE Dont Care................................................................ 44 2.1 Command Input.............................................. 15 6.9 Page Program Operation ............................... 44 2.2 Address Input ................................................. 15 6.10 Page Program Operation Timing with CE Dont 2.3 Data Input....................................................... 15 Care................................................................ 45 2.4 Data Output .................................................... 15 6.11 Page Program Operation with Random Data In- 2.5 Write Protect................................................... 15 put .................................................................. 45 2.6 Standby .......................................................... 15 6.12 Random Data Output In a Page ..................... 46 3. Command Set.............................................................. 16 6.13 Multiplane Page Program Operation 3.1 Page Read...................................................... 17 S34MS02G2 and S34MS04G2 ...................... 46 3.2 Page Program ................................................ 17 6.14 Block Erase Operation ................................... 47 3.3 Multiplane Program S34MS02G2 and 6.15 Multiplane Block Erase S34MS02G2 and S34MS04G2................................................... 18 S34MS04G2................................................... 48 3.4 Page Reprogram ............................................ 18 6.16 Copy Back Read with Optional Data Readout 49 3.5 Block Erase .................................................... 20 6.17 Copy Back Program Operation With Random 3.6 Multiplane Block Erase S34MS02G2 and Data Input....................................................... 49 S34MS04G2................................................... 20 6.18 Multiplane Copy Back Program S34MS02G2 3.7 Copy Back Program ....................................... 21 and S34MS04G2............................................ 50 3.8 Read Status Register ..................................... 22 6.19 Read Status Register Timing.......................... 51 3.9 Read Status Enhanced S34MS02G2 and 6.20 Read Status Enhanced Timing....................... 52 S34MS04G2................................................... 22 6.21 Reset Operation Timing ................................. 52 3.10 Read Status Register Field Definition............. 22 6.22 Read Cache ................................................... 53 3.11 Reset .............................................................. 23 6.23 Cache Program .............................................. 55 3.12 Read Cache.................................................... 23 6.24 Multiplane Cache Program S34MS02G2 and 3.13 Cache Program .............................................. 24 S34MS04G2................................................... 56 3.14 Multiplane Cache Program S34MS02G2 and 6.25 Read ID Operation Timing.............................. 58 S34MS04G2................................................... 25 6.26 Read ID2 Operation Timing............................ 58 3.15 Read ID .......................................................... 26 6.27 Read ONFI Signature Timing ......................... 59 3.16 Read ID2 ........................................................ 28 6.28 Read Parameter Page Timing........................ 59 3.17 Read ONFI Signature..................................... 28 6.29 Read Unique ID Timing (Contact Factory) ..... 60 3.18 Read Parameter Page.................................... 28 6.30 OTP Entry Timing........................................... 60 3.19 Read Unique ID (Contact Factory) ................. 31 6.31 Power On and Data Protection Timing........... 61 3.20 One-Time Programmable (OTP) Entry........... 32 6.32 WP Handling ................................................ 62 4. Signal Descriptions .................................................... 33 7. Physical Interface ....................................................... 63 4.1 Data Protection and Power On / Off Sequence... 7.1 Physical Diagram ........................................... 63 33 8. System Interface ......................................................... 66 4.2 Ready/Busy .................................................... 33 4.3 Write Protect Operation.................................. 34 9. Error Management ...................................................... 68 9.1 System Bad Block Replacement .................... 68 5. Electrical Characteristics........................................... 35 9.2 Bad Block Management ................................. 69 5.1 Valid Blocks.................................................... 35 5.2 Absolute Maximum Ratings............................ 35 10. Ordering Information.................................................. 70 5.3 AC Test Conditions......................................... 35 11. Document History....................................................... 71 5.4 AC Characteristics.......................................... 36 Sales, Solutions, and Legal Information ........................... 74 5.5 DC Characteristics.......................................... 37 5.6 Pin Capacitance ............................................. 38 Document Number: 002-03238 Rev. *E Page 2 of 74