X-On Electronics has gained recognition as a prominent supplier of S34MS08G201BHA003 NAND Flash across the USA, India, Europe, Australia, and various other global locations. S34MS08G201BHA003 NAND Flash are a product manufactured by SkyHigh Memory. We provide cost-effective solutions for NAND Flash, ensuring timely deliveries around the world.

S34MS08G201BHA003 SkyHigh Memory

S34MS08G201BHA003 electronic component of SkyHigh Memory
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Part No.S34MS08G201BHA003
Manufacturer: SkyHigh Memory
Category: NAND Flash
Description: NAND Flash SLC,8Gb,3x,1.8V,x8,4bit,VLD63,
Datasheet: S34MS08G201BHA003 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2300: USD 9.394 ea
Line Total: USD 21606.2 
Availability - 0
MOQ: 2300  Multiples: 2300
Pack Size: 2300
Availability Price Quantity
0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 2300
Multiples : 2300
2300 : USD 9.394
4600 : USD 9.097

   
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We are delighted to provide the S34MS08G201BHA003 from our NAND Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the S34MS08G201BHA003 and other electronic components in the NAND Flash category and beyond.

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S34MS08G2 8Gb,1.8 V, 4-bit ECC, x8 I/O, SLC NAND Flash Memory for Embedded Distinctive Characteristics Performance Density Page Read / Program 8 Gb (4 Gb 2) Random access: 30 s (Max) Sequential access: 45 ns (Min) Architecture (For each 4 Gb device) Program time / Multiplane Program time: 300 s (Typ) Input / Output Bus Width: 8-bits Block Erase / Multiplane Erase Page Size: (2048 + 128) bytes 128-byte spare area Block Erase time: 3.5 ms (Typ) Block Size: 64 Pages or (128k + 8k) bytes Plane Size Reliability 2048 Blocks per Plane or (256M + 16M) bytes 100,000 Program / Erase cycles (Typ) (with 4-bit ECC per Device Size 528 bytes) 2 Planes per Device or 512 MB 10 Year Data retention (Typ) Blocks zero and one are valid and will be valid for at least NAND Flash Interface 1000 program-erase cycles with ECC Open NAND Flash Interface (ONFI) 1.0 compliant Package Options Address, Data and Commands multiplexed Lead Free and Low Halogen Supply Voltage 63-Ball BGA 9 11 1 mm 1.8V device: V = 1.7V ~ 1.95V CC Security One Time Programmable (OTP) area Serial number (unique ID) Hardware program/erase disabled during power transition Additional Features Supports Multiplane Program and Erase commands Supports Copy Back Program Supports Multiplane Copy Back Program Supports Read Cache Electronic Signature Manufacturer ID: 01h Operating Temperature Industrial: 40 C to 85 C Industrial Plus: 40 C to 105 C SkyHigh Memory Limited Suite 4401-02, 44/F One Island East, www.skyhighmemory.com Document Number: 002-00515 Rev. *I 18 Westlands Road Hong Kong Revised May 22, 2019S34MS08G2 Contents 1. General Description..................................................... 3 8.4 Power Consumptions and Pin Capacitance for Allowed Stacking Configurations ............................. 13 2. Connection Diagram.................................................... 3 9. Physical Interface ....................................................... 14 3. Pin Description............................................................. 4 9.1 Physical Diagram.......................................................... 14 4. Block Diagrams............................................................ 5 10. Ordering Information.................................................. 15 5. Addressing ................................................................... 6 11. Revision History.......................................................... 16 6. Read Status Enhanced................................................ 7 Document History Page ...................................................... 16 7. Read ID.......................................................................... 7 7.1 Read Parameter Page ................................................... 9 8. Electrical Characteristics.......................................... 12 8.1 Valid Blocks ................................................................. 12 8.2 DC Characteristics....................................................... 12 8.3 Pin Capacitance........................................................... 13 Document Number: 002-00515 Rev. *I Page 2 of 16

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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