S34MS08G2 8 Gb, 4-Bit ECC, x8 I/O and 1.8 V V CC NAND Flash Memory for Embedded Distinctive Characteristics Performance Density Page Read / Program 8 Gb (4 Gb x 2) Random access: 30 s (Max) Sequential access: 45 ns (Min) Architecture (For each 4 Gb device) Program time / Multiplane Program time: 300 s (Typ) Input / Output Bus Width: 8-bits Page Size: (2048 + 128) bytes 128-byte spare area Block Erase / Multiplane Erase Block Size: 64 Pages or (128k + 8k) bytes Block Erase time: 3.5 ms (Typ) Plane Size 2048 Blocks per Plane or (256M + 16M) bytes Reliability Device Size 100,000 Program / Erase cycles (Typ) (with 4-bit ECC per 528 bytes) 2 Planes per Device or 512 Mbyte 10 Year Data retention (Typ) NAND Flash Interface Blocks zero and one are valid and will be valid for at least Open NAND Flash Interface (ONFI) 1.0 compliant 1000 Address, Data and Commands multiplexed program-erase cycles with ECC Supply Voltage Package Options 1.8V device: V = 1.7V ~ 1.95V CC Lead Free and Low Halogen Security 63-Ball BGA 9 x 11 x 1 mm One Time Programmable (OTP) area Serial number (unique ID) Hardware program/erase disabled during power transition Additional Features Supports Multiplane Program and Erase commands Supports Copy Back Program Supports Multiplane Copy Back Program Supports Read Cache Electronic Signature Manufacturer ID: 01h Operating Temperature Industrial: 40 C to 85 C Industrial Plus: 40 C to 105 C Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 002-00515 Rev. *E Revised October 27, 2016S34MS08G2 Contents 1. General Description..................................................... 3 8.4 Power Consumptions and Pin Capacitance for Allowed Stacking Configurations ............................. 13 2. Connection Diagram.................................................... 3 9. Physical Interface ....................................................... 14 3. Pin Description............................................................. 4 9.1 Physical Diagram.......................................................... 14 4. Block Diagrams............................................................ 5 10. Ordering Information.................................................. 15 5. Addressing ................................................................... 6 11. Revision History.......................................................... 16 6. Read Status Enhanced ................................................ 7 Document History Page ......................................................16 Sales, Solutions, and Legal Information ...........................17 7. Read ID.......................................................................... 7 Worldwide Sales and Design Support ............................17 7.1 Read Parameter Page ................................................... 9 Products .........................................................................17 8. Electrical Characteristics.......................................... 12 PSoC Solutions .......................................................... 17 8.1 Valid Blocks ................................................................. 12 Cypress Developer Community ..................................... 17 8.2 DC Characteristics....................................................... 12 Technical Support .........................................................17 8.3 Pin Capacitance........................................................... 13 Document Number: 002-00515 Rev. *E Page 2 of 17