X-On Electronics has gained recognition as a prominent supplier of S34MS08G201BHI000 NAND Flash across the USA, India, Europe, Australia, and various other global locations. S34MS08G201BHI000 NAND Flash are a product manufactured by SkyHigh Memory. We provide cost-effective solutions for NAND Flash, ensuring timely deliveries around the world.

S34MS08G201BHI000 SkyHigh Memory

S34MS08G201BHI000 electronic component of SkyHigh Memory
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Part No.S34MS08G201BHI000
Manufacturer: SkyHigh Memory
Category: NAND Flash
Description: NAND Flash SLC,8Gb,3x,1.8V,x8,4bit,VLD63,
Datasheet: S34MS08G201BHI000 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 19.7159 ea
Line Total: USD 19.72 
Availability - 173
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
173
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 19.7159
10 : USD 18.3876
25 : USD 16.1931
100 : USD 15.3384
210 : USD 12.9822
420 : USD 11.9312
1050 : USD 11.8734
2520 : USD 11.8156
5040 : USD 11.7463

405
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 24
Multiples : 1
24 : USD 21.5329
25 : USD 21.1063
100 : USD 20.2361
500 : USD 19.383
1000 : USD 18.3081

   
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We are delighted to provide the S34MS08G201BHI000 from our NAND Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the S34MS08G201BHI000 and other electronic components in the NAND Flash category and beyond.

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S34MS08G2 8 Gb, 4-Bit ECC, x8 I/O and 1.8 V V CC NAND Flash Memory for Embedded Distinctive Characteristics Performance Density Page Read / Program 8 Gb (4 Gb x 2) Random access: 30 s (Max) Sequential access: 45 ns (Min) Architecture (For each 4 Gb device) Program time / Multiplane Program time: 300 s (Typ) Input / Output Bus Width: 8-bits Page Size: (2048 + 128) bytes 128-byte spare area Block Erase / Multiplane Erase Block Size: 64 Pages or (128k + 8k) bytes Block Erase time: 3.5 ms (Typ) Plane Size 2048 Blocks per Plane or (256M + 16M) bytes Reliability Device Size 100,000 Program / Erase cycles (Typ) (with 4-bit ECC per 528 bytes) 2 Planes per Device or 512 Mbyte 10 Year Data retention (Typ) NAND Flash Interface Blocks zero and one are valid and will be valid for at least Open NAND Flash Interface (ONFI) 1.0 compliant 1000 Address, Data and Commands multiplexed program-erase cycles with ECC Supply Voltage Package Options 1.8V device: V = 1.7V ~ 1.95V CC Lead Free and Low Halogen Security 63-Ball BGA 9 x 11 x 1 mm One Time Programmable (OTP) area Serial number (unique ID) Hardware program/erase disabled during power transition Additional Features Supports Multiplane Program and Erase commands Supports Copy Back Program Supports Multiplane Copy Back Program Supports Read Cache Electronic Signature Manufacturer ID: 01h Operating Temperature Industrial: 40 C to 85 C Industrial Plus: 40 C to 105 C Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 002-00515 Rev. *E Revised October 27, 2016S34MS08G2 Contents 1. General Description..................................................... 3 8.4 Power Consumptions and Pin Capacitance for Allowed Stacking Configurations ............................. 13 2. Connection Diagram.................................................... 3 9. Physical Interface ....................................................... 14 3. Pin Description............................................................. 4 9.1 Physical Diagram.......................................................... 14 4. Block Diagrams............................................................ 5 10. Ordering Information.................................................. 15 5. Addressing ................................................................... 6 11. Revision History.......................................................... 16 6. Read Status Enhanced ................................................ 7 Document History Page ......................................................16 Sales, Solutions, and Legal Information ...........................17 7. Read ID.......................................................................... 7 Worldwide Sales and Design Support ............................17 7.1 Read Parameter Page ................................................... 9 Products .........................................................................17 8. Electrical Characteristics.......................................... 12 PSoC Solutions .......................................................... 17 8.1 Valid Blocks ................................................................. 12 Cypress Developer Community ..................................... 17 8.2 DC Characteristics....................................................... 12 Technical Support .........................................................17 8.3 Pin Capacitance........................................................... 13 Document Number: 002-00515 Rev. *E Page 2 of 17

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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