PRELIMINARY DATA SHEET SKY66005-11: 850 to 920 MHz, +19 dBm Linear Power Amplifier Applications Residential femtocells VEN MMIC WCDMA, Bands 5, 6, 18, 19, and 26 VCC1 Driver Stage Power Stage Small cells Bias Bias Output Input Inter-Stage RF IN DA PA RF OUT Match Match Match Features VCC2 Small signal gain: 29 dB CPL OUT CPL IN ACLR at POUT = +29 dBm: -51 dBc S2993 PA on/off control Figure 1. SKY66005-11 Linear PA Block Diagram I/O impedance internally matched to 50 Single DC supply: 3.3 V to 4.6 V Description Minimal number of external components required The SKY66005-11 linear power amplifier (PA) is a fully matched surface mount module developed for WCDMA applications Small footprint MCM (10-pin, 3 x 3 mm) package operating from 850 to 920 MHz. The device meets the stringent (MSL3, 260 C per JEDEC J-STD-020) spectral linearity requirements of WCDMA femtocell applications with high power-added efficiency. An integrated directional coupler eliminates the need for any external coupler. TM Skyworks Green products are compliant with The GaAs MMIC contains all active amplifier circuitry, which all applicable legislation and are halogen-free. includes input and interstage matching circuits. An output match For additional information, refer to Skyworks TM into a 50 load, realized off-chip within the module package, Denition of Green , document number optimizes efficiency and power performance. SQ040074. The SKY66005-11 is manufactured with Skyworks InGaP GaAs HBT process, which provides for all positive voltage DC supply operation and maintains high efficiency and good linearity. The 1 10 VCC1 VCC2 primary bias to the device can be supplied directly from any suitable power supply with an output of 4.2 V. Power down is RF IN 2 9 RF OUT achieved by setting the VEN pin to 0 V. No external supply side switch is needed since typical off leakage is a few microamps with full primary voltage supplied from the main power supply. GND 3 8 CPL IN The SKY66005-11 is packaged in a 10-pin, 3 x 3 mm Multi-Chip GND 4 7 GND Module (MCM), which allows for a highly manufacturable low-cost solution. 5 6 A functional block diagram of the SKY66005-11 is shown in VEN CPL OUT Figure 1. The 10-pin MCM package and pinout are shown in Figure 2. Signal pin assignments and functional pin descriptions S2992 are provided in Table 1. Figure 2. SKY66005-11 Pinout (Top View) Skyworks Solutions, Inc. Phone 781 376-3000 Fax 781 376-3100 sales skyworksinc.com www.skyworksinc.com 202504D Skyworks Proprietary Information Products and Product Information are Subject to Change Without Notice October 6, 2017 1 PRELIMINARY DATA SHEET SKY66005-11: 850 TO 920 MHz, +19 dBm LINEAR POWER AMPLIFIER Table 1. SKY66005-11 Signal Descriptions Pin Name Description Pin Name Description 1 VCC1 Input stage supply voltage 6 CPL OUT RF coupler output 2 RF IN RF input port 7 GND Ground 3 GND Ground 8 CPL IN RF coupler input 4 GND Ground 9 RF OUT RF output port 5 VEN Enable 10 VCC2 Output stage supply voltage Technical Description Electrical and Mechanical Specifications The SKY66005-11 PA contains all of the needed RF matching and The absolute maximum ratings of the SKY66005-11 are provided DC biasing circuits. The device is a two-stage, HBT InGaP device in Table 2. The recommended operating conditions are specified optimized for high linearity and power efficiency. These features in Table 3 and electrical specifications are provided in Table 4. make the device suitable for wideband digital applications where A typical performance plot of ACLR5 versus output power is PA linearity and power consumption are of critical importance shown in Figure 3. (e.g., small cell and infrastructure applications). The device is designed for standard WCDMA modulated signals. Under these stringent test conditions, the device exhibits excellent spectral purity and power efficiency. 1 Table 2. SKY66005-11 Absolute Maximum Ratings Parameter Symbol Minimum Maximum Units Supply voltage (VCC1, VCC2) VCC 0 +4.6 V Total supply current ICC 700 mA Logic control input voltage (VEN) VCTL -0.5 3.1 V 2 Case operating temperature TC -40 +85 C Storage temperature TSTG -55 +150 C Junction temperature TJ +150 C Thermal resistance JC 60 C/W Electrostatic discharge: ESD Charged Device Model (CDM), Class 3 1000 V Human Body Model (HBM), Class 1C 1000 V Machine Model (MM), Class A 50 V 1 Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with only one parameter set at the limit and all other parameters set at or below their nominal value. Exceeding any of the limits listed here may result in permanent damage to the device. 2 Case operating temperature (Tc) refers to the temperature of the bottom ground pad. ESD HANDLING: Although this device is designed to be as robust as possible, electrostatic discharge (ESD) can damage this device. This device must be protected at all times from ESD when handling or transporting. Static charges may easily produce potentials of several kilovolts on the human body or equipment, which can discharge without detection. Industry-standard ESD handling precautions should be used at all times. Skyworks Solutions, Inc. Phone 781 376-3000 Fax 781 376-3100 sales skyworksinc.com www.skyworksinc.com 2 October 6, 2017 Skyworks Proprietary Information Products and Product Information are Subject to Change Without Notice 202504D