DATA SHEET SMP1331-087LF: 45 W Surface Mount Series Connected PIN Diode Applications Low-loss, high-power switches Low-distortion attenuators Features High RF power handling: 45 W Low thermal resistance: 26 C/W Low series resistance: 0.50 typical 100 mA Low total capacitance: 0.35 pF maximum 30 V Small QFN (2 2 mm) package (MSL1, 260 C per JEDEC J-STD-020) Anode Cathode (Pin 2) (Pin 1) Skyworks Green products are compliant with 203589-001 all applicable legislation and are halogen-free. For additional information, refer to Skyworks Figure 1. SMP1331-087LF Block Diagram Denition of Green, document number SQ04-0074. Description The SMP1331-087LF is a surface mountable, low-capacitance silicon PIN diode designed as a series connected PIN diode for high-power, high-volume switch and attenuator applications from 10 MHz to beyond 6 GHz. Typical resistance at 100 mA is 0.50 and maximum capacitance at 30 V is 0.35 pF. The combination of low capacitance, low parasitic inductance, and nominal 30 m I-region width, makes the SMP1331-087LF useful in large signal switches and attenuator applications. The device has a 0.75 W dissipation power rating, which makes it capable of handling up to 45 W 85 C Continuous Wave (CW) in a series-connected transmit/receive (T/R) switch. Design information for high-power switches may be found in the Skyworks Application Note, Design With PIN Diodes (document number 200312). A block diagram of the SMP1331-087LF is shown in Figure 1. Skyworks Solutions, Inc. Phone 781 376-3000 Fax 781 376-3100 sales skyworksinc.com www.skyworksinc.com 203589B Skyworks Proprietary Information Products and Product Information are Subject to Change Without Notice August 18, 2016 1 DATA SHEET SMP1331-087LF: 45 W SURFACE MOUNT SERIES CONNECTED PIN DIODE bias schematic, and Table 3 lists the Evaluation Board Bill of Electrical and Mechanical Specifications Materials. Typical RF performance of the SMP1331-087LF using The absolute maximum ratings of the SMP1331-087LF are the schematic shown in Figure 5 is summarized in Table 4 and provided in Table 1. Electrical specifications are provided in illustrated in Figures 6, 7, and 8. Table 2. Typical DC performance characteristics of the SMP1331-087LF are illustrated in Figures 2, 3, and 4. An assembly drawing for the Evaluation Board is shown in Figure 9. The layer detail physical characteristics are provided in The SMP1331-087LF Evaluation Board is used to test the Figure 10. performance of the SMP1331-087LF PIN Diode. Figure 5 shows a 1 Table 1. SMP1331-087LF Absolute Maximum Ratings Parameter Symbol Minimum Maximum Units Forward current IF 200 mA Reverse voltage VR 200 V Dissipated power 85 C PD 0.75 W Peak pulse power dissipation 85 C (10% duty cycle) 7.5 W Operating temperature TA 55 +85 C Storage temperature TSTG 55 +200 C Junction temperature TJ 55 +175 C Electrostatic discharge: ESD Charged-Device Model (CDM), Class 4 1100 V Human Body Model (HBM), Class 3A 5000 V Machine Model (MM), Class C 400 V 1 Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with only one parameter set at the limit and all other parameters set at or below their nominal value. Exceeding any of the limits listed here may result in permanent damage to the device. ESD HANDLING: Although this device is designed to be as robust as possible, electrostatic discharge (ESD) can damage this device. This device must be protected at all times from ESD when handling or transporting. Static charges may easily produce potentials of several kilovolts on the human body or equipment, which can discharge without detection. Industry-standard ESD handling precautions should be used at all times. 1 Table 2. SMP1331-087LF Electrical Specifications (TA = +25 C, Unless Otherwise Noted) Parameter Symbol Test Condition Min Typical Max Units Forward voltage VF IF = 10 mA 0.80 V Reverse leakage current IR VR = 200 V 10 A Series resistance RS1 IF = 1 mA, f = 100 MHz 9.0 14.5 RS10 IF = 10 mA, f = 100 MHz 1.7 RS100 IF = 100 mA, f = 100 MHz 0.50 Total capacitance CT30 VR = 30 V, f = 1 MHz 0.26 0.35 pF Series inductance LS 0.37 nH Minority carrier lifetime tL IF = 10 mA 600 ns I region width W 30 m Thermal resistance (Note 2) JC Junction-to-case 26 C/W Peak thermal resistance P Single, 1 s pulse width, junction-to-case (10% duty cycle) 2.6 C/W 1 Performance is guaranteed only under the conditions listed in this table. 2 Assume a thermal resistance of 90 C/W for the junction-to-bottom of the circuit board. Skyworks Solutions, Inc. Phone 781 376-3000 Fax 781 376-3100 sales skyworksinc.com www.skyworksinc.com 2 August 18, 2016 Skyworks Proprietary Information Products and Product Information are Subject to Change Without Notice 203589B