X-On Electronics has gained recognition as a prominent supplier of SL11P06D MOSFETs across the USA, India, Europe, Australia, and various other global locations. SL11P06D MOSFETs are a product manufactured by SLKORMICRO. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SL11P06D SLKORMICRO

SL11P06D electronic component of SLKORMICRO
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See Product Specifications
Part No. SL11P06D
Manufacturer: SLKORMICRO
Category: MOSFETs
Description: MOSFET P Trench 60V 11A (Tc) 2.5V @ 250uA 180 mO @ 3A,10V TO-252-2 (DPAK) RoHS
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
100: USD 0.1729 ea
Line Total: USD 17.29 
Availability - 0
MOQ: 100  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 16 May to Wed. 21 May
MOQ : 100
Multiples : 1
100 : USD 0.1729
500 : USD 0.1669
1000 : USD 0.165
5000 : USD 0.1584

   
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We are delighted to provide the SL11P06D from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SL11P06D and other electronic components in the MOSFETs category and beyond.

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The SL11P06D with MOSFET is a P-channel Trench MOSFET. It has a 60V drain-source voltage, and can handle up to 11A of drain-source current. Its gate-source voltage is 2.5V and it has a static drain-source on-resistance of 180 mO when the drain-source current is 3A. The gate-source current is 250uA and its drain-source breakdown voltage is 10V. It's housed in a TO-252-2 (DPAK) RoHS package and is manufactured by SLKORMICRO.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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