1N3212 thru 1N3214R V = 400 V - 600 V RRM Silicon Standard I = 15 A F Recovery Diode Features High Surge Capability DO-5 Package Types from 400 V to 600 V V RRM Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Parameter Symbol Conditions 1N3212 (R) 1N3213 (R) 1N3214 (R) Unit Repppetitive peak reverse voltagge V 400 500 600 V RRM V 280 350 420 RMS reverse voltage V RMS V 400 500 600 V DC blocking voltage DC I T 150 C Continuous forward current 15 15 15 A F C Surge non-repetitive forward I T = 25 C, t = 8.3 ms 297 297 297 A F,SM C p current, Half Sine Wave Operating temperature T -55 to 150 -55 to 150 -55 to 150 C j T -55 to 150 -55 to 150 -55 to 150 Storage temperature C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions 1N3212 (R) 1N3213 (R) 1N3214 (R) Parameter Symbol Unit V I = 15 A, T = 25 C 1.5 1.5 1.5 V Diode forward voltage F F j V = 50 V, T = 25 C 10 10 10 R j A I Reverse current R V = 50 V, T = 150 C 10 10 10 mA R j Thermal characteristics R Thermal resistance, junction - ca 0.65 0.65 0.65 C/W thJC 1 Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/1N3212 thru 1N3214R 2 Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/