1N3289A(R) thru 1N3294A(R) V = 200 V - 1400 V RRM Silicon Standard I =100 A F Recovery Diode Features High Surge Capability DO-8 Package Types up to 1400 V V RRMOrientation Standard 2 1 2 2 2 1 1 1 Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Parameter Symbol Conditions 1N3289A(R) 1N3291A(R) 1N3293A(R) 1N3294A(R) Unit Repppetitive peak reverse voltagge V 200 400 600 800 V RRM V 600 800 DC blocking voltage 200 400 V DC T 130 C I 100 100 100 100 A Continuous forward current C F Surge non-repetitive forward I T = 25 C, t = 8.3 ms 2300 2300 2300 2300 A F,SM C p current, Half Sine Wave 2 I t for fusing I t 60 Hz Half wave 22000 22000 22000 22000 2 A sec 2 Operating temperature T -40 to 200 -40 to 200 -40 to 200 -40 to 200 C j T -40 to 200 -40 to 200 Storage temperature -40 to 200 -40 to 200 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions 1N3293A(R) 1N3294A(R) Parameter Symbol 1N3289A(R) 1N3291A(R) Unit V I = 100 A, T = 130 C 1.5 1.5 V Diode forward voltage F F j 1.5 1.5 I V = V , T = 130 C Reverse current 24 24 17 13 mA R R RRM j Thermal characteristics Thermal resistance, junction - R 0.40 0.40 0.40 0.40 C/W thJC case www.genesicsemi.com 11N3289A(R) thru 1N3294A(R) www.genesicsemi.com 2