NVHL080N120SC1
NChannel Silicon Carbide
MOSFET
1200 V, 80 m, TO2473L
Description
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Silicon Carbide (SiC) MOSFET uses a completely new technology
that provide superior switching performance and higher reliability
compared to Silicon. In addition, the low ON resistance and compact
V R TYP I MAX
DSS DS(ON) D
chip size ensure low capacitance and gate charge. Consequently,
system benefits include highest efficiency, faster operation frequency,
1200 V 80 m 20 A
increased power density, reduced EMI, and reduced system size.
D
Features
1200 V @ T = 175C
J
Max R = 110 m at V = 20 V, I = 20 A
DS(on) GS D
High Speed Switching with Low Capacitance
G
100% UIL Tested
Qualified for Automotive According to AECQ101
These Devices are PbFree and are RoHS Compliant
S
Applications
Automotive Auxiliary Motor Drive
Automotive On Board Charger
Automotive DC/DC Converter for EV/HEV
G
D
S
TO247
long leads
CASE 340CX
MARKING DIAGRAM
$Y&Z&3&K
NVHL080
N120SC1
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Data Code (Year & Week)
&K = Lot
NVHL080N120SC1 = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Semiconductor Components Industries, LLC, 2018
1 Publication Order Number:
December, 2018 Rev. 0 NVHL080N120SC1/DNVHL080N120SC1
ABSOLUTE MAXIMUM RATINGS (T = 25C, unless otherwise noted)
A
Symbol Parameter Ratings Unit
V DraintoSource Voltage 1200 V
DSmax
V Max. GatetoSource Voltage @ T < 175C 15 / +25 V
GSmax C
V (DC) Recommended operation Values of Gate @ T < 175C 5 / +20 V
GSop C
Source Voltage
V (AC) Recommended operation Values of Gate @ T < 175C 5 / +20 V
GSop C
Source Voltage (f > 1 Hz)
I Continuous Drain Current V = 20 V, T = 25C 44 A
D GS C
V = 20 V, T = 100C 31
GS C
I Pulse Drain Current Pulse width tp limited by 136 A
D(Pulse)
Tj max
E Single Pulse Avalanche Energy (Note 1) 171 mJ
AS
P Power Dissipation T = 25C 348 W
tot C
T = 150C 58
C
T , T Operating and Storage Junction Temperature Range 55 to +175 C
J STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. E of 171 mJ is based on starting Tj = 25C, L = 1 mH, I = 18.5 A, , V = 50 V, R = 25 .
AS AS DD G
THERMAL CHARACTERISTICS
Symbol Parameter Ratings Unit
R Thermal Resistance, JunctiontoCase 0.43 C/W
JC
R Thermal Resistance, JunctiontoAmbient 40
JA
PACKAGE MARKING AND ORDERING INFORMATION
Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity
NVHL080N120SC1 NVHL080N120SC1 TO247 Tube N/A N/A 30 Units
Long Lead
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2