X-On Electronics has gained recognition as a prominent supplier of SPT40N120T1B IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. SPT40N120T1B IGBT Transistors are a product manufactured by SPTECH. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

SPT40N120T1B SPTECH

Name: SPT40N120T1B
Brand: SPTECH
SKU: SPT40N120T1B_SPTECH
Availability: InStock
Rating: 5 (11 reviews)

SPT40N120T1B electronic component of SPTECH

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See Product Specifications

Part No.	SPT40N120T1B
Manufacturer:	SPTECH
Category:	IGBT Transistors
Description:	416W 40A 1.2kV Trench Field Stop TO-247-3 IGBTs ROHS
Datasheet:	SPT40N120T1B Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 3.6736 ea
Line Total: USD 3.67

Availability - 3
Ship by Fri. 06 Dec to Wed. 11 Dec

MOQ: 1 Multiples: 1
Pack Size: 1

SPT40N120T1B More Buying Options & Price Grid(s)

Please wait...

Availability Price Buy Price Quantity

3

Ship by Fri. 06 Dec to Wed. 11 Dec

MOQ : 1
Multiples : 1

1 : USD 3.6736
10 : USD 3.1988
30 : USD 2.918
90 : USD 2.633
510 : USD 2.5017
990 : USD 2.4431

Specifications

Manufacturer
SPTECH SPTECH

Product Category
IGBT Transistors IGBT Transistors

Category
IGBT Transistors IGBT Transistors

Rohs
y y

Package
TO - 247 TO - 247

Brand Category
Sptech Sptech

Turn Off Delay Time Tdoff
230ns 230ns

Power Dissipation Pd
416 W 416 W

Operating Temperature
- 40 C ~ + 150 C @ (Tj) - 40 C ~ + 150 C @ (Tj)

Turn On Delay Time Tdon
55ns 55ns

Collector Current Ic
40 A 40 A

Collector-Emitter Breakdown Voltage Vces
1.2 kV 1.2 kV

Type
????? ?????

Gate-Emitter Threshold Voltage Vgeth@Ic
5.8 V @250uA 5.8 V @250uA

Total Gate Charge Qg@Ic Vge
270 nC @40A , 15V 270 nC @40A , 15V

Collector-Emitter Saturation Voltage Vcesat@Ic Vge
1.7 V @40A , 15 V 1.7 V @40A , 15 V

Diode Reverse Recovery Time Trr
190ns 190ns

Turn Off Switching Loss Eoff
1.5mJ 1.5mJ

Turn On Switching Loss Eon
2.4mJ 2.4mJ

Collector Cut-Off Current Ices@Vce
10 uA @1.2kV 10 uA @1.2kV

Input Capacitance Cies@Vce
4.4 nF @25V 4.4 nF @25V

Diode Forward Voltage Vf@If
3.5 V @40A 3.5 V @40A

Pulsed Collector Current Icm
160 A 160 A

Notes:- Show Stocked Products With Similar Attributes.

SPT40N120T1B Alternative Parts

We are delighted to provide the SPT40N120T1B from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SPT40N120T1B and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

The SPT40N120T1B with 416W 40A 1.2kV Trench Field Stop TO-247-3 IGBTs ROHS is a Insulated Gate Bipolar Transistor (IGBT) manufactured by SPTECH. It is a high power switching device with low on-state voltage drop and fast switching capability. It features a current rating of 40 Amps, a voltage rating of 1.2kV, and a power rating of 416W. The device can be used for powering a variety of applications, including motor control, LED lighting, and industrial drives. The IGBT has low switching loss, low EMI, and a soft switching feature, making it a reliable choice for power supply applications. This electronic part is RoHS compliant, and is manufactured with top-grade material for reliable and safe operation.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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Availability	Price	Buy Price	Quantity
3 Ship by Fri. 06 Dec to Wed. 11 Dec MOQ : 1 Multiples : 1	1 : USD 3.6736 10 : USD 3.1988 30 : USD 2.918 90 : USD 2.633 510 : USD 2.5017 990 : USD 2.4431

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