X-On Electronics has gained recognition as a prominent supplier of SPT50N65F1A1 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. SPT50N65F1A1 IGBT Transistors are a product manufactured by SPTECH. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

SPT50N65F1A1 SPTECH

SPT50N65F1A1 electronic component of SPTECH
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Part No.SPT50N65F1A1
Manufacturer: SPTECH
Category: IGBT Transistors
Description: TO-247-3 IGBTs ROHS
Datasheet: SPT50N65F1A1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.3074 ea
Line Total: USD 3.31 
Availability - 106
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
106
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 3.3074
10 : USD 2.8521
30 : USD 2.5681
90 : USD 2.2761
450 : USD 2.1431
900 : USD 2.0868

   
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We are delighted to provide the SPT50N65F1A1 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SPT50N65F1A1 and other electronic components in the IGBT Transistors category and beyond.

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The SPT50N65F1A1 with TO-247-3 IGBTs is a power transistor manufactured by SPTECH. It is an insulated gate bipolar transistor (IGBT) with a large current and voltage capacity. The package of this component is the TO-247-3 making it suitable for use in a wide range of applications. The device comes with a metal oxide semiconductor (MOS) gate structure that is designed to reduce power dissipation. In addition, it offers high surge current capability, excellent output current capability, and superior switching performance. It is also RoHS compliant and meets the most stringent safety requirements. This device can be used in power electronics applications such as welding machines, motor controls, and traction controls.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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