BAS69WFILM STMicroelectronics

BAS69 Low capacitance small signal Schottky diodes Features BAS69KFILM Low diode capacitance (Single) Designed for RF applications SOD-523 Low profile packages Very low parasitic inductor and resistor Description BAS69WFILM (Single) The BAS69 series use 15V barrier, with extremely low junction capacitance, suitable for the BAS69-05WFILM detection of an RF signal and the compensation (Common cathode) SOT-323 of the voltage drift with the temperature. The presented packages make the device ideal in BAS69-06WFILM applications where space saving is critical. (Common anode) The low junction capacitance will reduce the BAS69-04WFILM disturbance on the RF signal. (Series) BAS69-07P6FILM (2 parallel diodes) BAS69-09P6FILM SOT-666 (2 opposite diodes) Configurations in top view Table 1. Device summary Symbol Value I 10 mA F V 15 V RRM C (typ) < 1 pF T (max) 150 C j October 2009 Doc ID 12565 Rev 2 1/9 www.st.com 9 Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) Characteristics BAS69 1 Characteristics Table 2. Absolute ratings (limiting values at T = 25 C, unless otherwise specified) j Symbol Parameter Value Unit V Repetitive peak reverse voltage 15 V RRM I Continuous forward current 10 mA F Half wave, single phase I Surge non repetitive forward current 2A FSM 60 Hz T Storage temperature range -65 to +150 stg (1) T Maximum operating junction temperature 150 C j (1) T Maximum soldering temperature 260 L 1. Pulse test: t = 380 s, < 2 % p Table 3. Thermal parameters Symbol Parameter Value Unit SOT-323 550 (1) R Junction to ambient C/W th(j-a) SOD-523, SOT-666 600 1. Epoxy printed circuit board with recommended pad layout Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit T = 25 C 0.035 j V = 1 V R T = 125 C 6 30 j (1) I Reverse leakage current A R T = 25 C 0.23 j V = 15 V R T = 125 C 10 100 j T = 25 C 350 380 j I = 1 mA F T = 125 C 230 260 j (1) V Forward voltage drop mV F T = 25 C 500 570 j I = 10 mA F T = 125 C 460 510 j 1. Pulse test: t 250 ms, 2 % p Table 5. Dynamic characteristics Test conditions Symbol Parameter Min. Typ Max. Unit C Diode capacitance V = 0 V, F = 1 MHz 1.0 pF R R Forward resistance I = 5 mA, F = 100 MHz 15 F F L Series inductance 1.5 nH S 2/9 Doc ID 12565 Rev 2 Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s)