BAS70KFILM STMicroelectronics

BAS70 Low capacitance, low series inductance and resistance Schottky diodes Features BAS70ZFILM (Single) Very low conduction losses SOD-123 Negligible switching losses Low forward and reverse recovery times BAS70JFILM (Single) Surface mount device Low capacitance diode SOD-323 Low resistance and inductance BAS70KFILM (Single) Description SOD-523 BAS70FILM The BAS70 series uses 70 V Schottky barrier (Single) diodes packaged in SOD-123, SOD-323, SOD- 523, SOT-23, SOT-323, SOT-323-6L or SOT-666. BAS70-04FILM These diodes are specially suited for signal (Series) SOT-23 detection and temperature compensation in RF BAS70-05FILM applications. (Common cathode) BAS70-06FILM (Common anode) BAS70WFILM (Single) BAS70-04WFILM (Series) SOT-323 BAS70-05WFILM (Common cathode) BAS70-06WFILM (Common anode) BAS70-08SFILM (3 parallel diodes) Table 1. Device summary SOT-323-6L Symbol Value BAS70-07P6FILM (2 parallel diodes) I 70 mA F V 70 V RRM BAS70-09P6FILM SOT-666 (2 opposite diodes) C (max) 2 pF T (max) 150 C j Configurations in top view October 2009 Doc ID 12563 Rev 2 1/14 www.st.com 14Characteristics BAS70 1 Characteristics Table 2. Absolute ratings (limiting values at T = 25 C, unless otherwise specified) j Symbol Parameter Value Unit V Repetitive peak reverse voltage 70 V RRM I Continuous forward current 70 mA F I Surge non repetitive forward current t = 10 ms Sinusoidal 1 A FSM p T Storage temperature range - 65 to +150 C stg T Maximum operating junction temperature 150 C j T Maximum soldering temperature 260 C L Table 3. Thermal parameters Symbol Parameter Value Unit SOD-123, SOT-23 500 (1) R Junction to ambient SOT-323, SOD-323 550 C/W th(j-a) SOD-523, SOT-666 600 1. Epoxy printed circuit board with recommended pad layout Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V = 50 V 100 nA R (1) I Reverse leakage current T = 25 C R j A V = 70 V 10 R I = 1 mA 410 F (2) V Forward voltage drop T = 25 C I = 10 mA 750 mV F j F I = 15 mA 1000 F 1. Pulse test: t = 5 ms, < 2 % p 2. Pulse test: t = 380 s, < 2 % p Table 5. Dynamic characteristics Test conditions Symbol Parameter Min. Typ. Max. Unit C Diode capacitance V = 0 V, F = 1 MHz 2 pF R Differential forward R I = 10 mA, F = 100 MHz 30 F F resistance L Series inductance 1.5 nH S 2/14 Doc ID 12563 Rev 2