BAT 15-099 E6327 Infineon

BAT15-099 Anti-parallel silicon RF Schottky diode pair Product description These Infineon RF Schottky diodes are silicon low barrier N-type devices with an integrated guard ring on-chip for over-voltage protection. Their low barrier height, low forward voltage and low junction capacitance make BAT15-099 a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz. Feature list Low inductance L = 2 nH (typical) S Low capacitance C = 0.29 pF (typical) at 1 MHz Industry standard SOT143 package (2.9 mm x 2.4 mm x 1 mm) Pb-free (RoHS compliant) and halogen-free Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications For mixers and detectors in: Wearables Smart metering Telematic systems Set top boxes Device information 4 3 D1 D2 1 2 Table 1 Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel BAT15-099 / BAT15099E6327HTSA1 SOT143 Anti-parallel pair S5s 3 k BAT15-099 / BAT15099E6433HTMA1 10 k Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document v1.0 www.infineon.com 2018-06-30BAT15-099 Anti-parallel silicon RF Schottky diode pair Table of contents Table of contents Product description 1 Feature list . 1 Product validation . 1 Potential applications 1 Device information . 1 Table of contents . 2 1 Absolute maximum ratings 2 2 Electrical performance in test fixture 3 2.1 Electrical characteristics . 3 2.2 Characteristic curves .4 3 Thermal characteristics . 6 4 Package information SOT143 8 Revision history 9 Disclaimer 10 1 Absolute maximum ratings Table 2 Absolute maximum ratings at T = 25 C, unless otherwise specified A Parameter Symbol Values Unit Note or test condition Min. Max. Diode reverse voltage V 4 V R Forward current I 110 mA F 1) Total power dissipation P 100 mW T 48 C TOT S Junction temperature T 150 C J Operating temperature T -55 150 OP Storage temperature T -55 150 STG Attention: Stresses above the maximum values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the component. 1 T is the soldering point temperature. S Datasheet 2 v1.0 2018-06-30