BAT165E6327HTSA1 Infineon

BAT165... Medium Power AF Schottky Diode Forward current: 750 mA Reverse voltage: 40 V For low-loss, fast-recovery, meter protection, bias isolation and clamping applications 1) Pb-free (RoHS compliant) package Qualified according AEC Q101 BAT165 ESD (Electrostatic discharge) sensitive device, observe handling precaution Type Package Configuration Marking BAT165 SOD323 single C/White Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 2) 40 V Diode reverse voltage V R 2) 750 mA Forward current I F Average rectified forward current (50/60Hz, sinus) I 500 mA FAV Non-repetitive peak surge forward current I 2.5 A FSM (t 10ms) 600 mW Total power dissipation P tot T 93C S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 3) K/W Junction - soldering point R 95 thJS 1 Pb-containing package may be available upon special request 2 For T > 25C the derating of V and I has to be considered. Please refer to the atteched curves. A R F 3 For calculation of R please refer to Application Note Thermal Resistance thJA 1 2007-04-19BAT165... Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 1) Reverse current I A R V = 30 V - - 12 R V = 40 V - - 50 R V = 40 V, T = 65 C - - 900 R A V Forward voltage V F I = 10 mA 0.23 0.315 0.4 F I = 100 mA 0.32 0.39 0.47 F I = 250 mA 0.35 0.44 0.54 F I = 750 mA 0.44 0.58 0.74 F AC Characteristics - 8.4 12 pF Diode capacitance C T V = 10 V, f = 1 MHz R 1 Pulsed test: t = 300 s D = 0.01 p 2 2007-04-19