DSILC6-4SC6 STMicroelectronics

DSILC6-4xx ESD Protection for high speed interface Main applications I/O3 VCC Where transient over-voltage protection in ESD I/O4 I/O2 sensitive equipment is required, such as: GND I/O1 Computers Printers SOT-666 Flip-Chip Communication systems DSILC6-4P6 DSILC6-4F2 Cell phone handsets and accessories Video equipment Functional diagram Description I/O4 VCC I/O3 I/O1 VCC I/O2 The DSILC6-4xx is a monolithic application specific discrete dedicated to ESD protection of high speed interfaces, such as USB 2.0, Ethernet, display and camera serial interfaces (LVDS). I/O4 GND I/O3 I/O1 GND I/O2 The device is ideal for applications where both SOT-666 Flip-Chip reduced printed circuit board space and power Top-side view Top-side view absorption capability are required. Features I/O2 I/O1 VCC I/O4 GND I/O3 Diode array topology 4 line protection Flip-Chip 5 V V protection CC Top-side view Very low capacitance: 1 pF typ. Lead-free pacakge RoHS compliant Order Code Part Number Marking Benefits DSILC6-4P6 G Very low capacitance between lines to GND for DSILC6-4F2 EI optimized data integrity Low PCB space consumption: 2.9 mm max for Complies with the following standards: SOT-666 and 1.5 mm max for Flip-Chip Cut-off frequency > 2 GHz IEC 61000-4-2 level 4: High reliability offered by monolithic integration 8 kV (contact discharge) MDDI, SMIA, MIPI specification compliant 15 kV (air discharge) MIL STD 883G-Method 3015-7: class 3B May 2007 Rev 3 1/11 www.st.com 11Characteristics DSILC6-4xx 1 Characteristics Table 1. Absolute ratings Symbol Parameter Value Unit IEC 61000-4-2 contact discharge 8 V Peak pulse voltage kV PP IEC 61000-4-2 air discharge 15 SOT-666 5 I Peak pulse current A PP Flip-Chip 7 I/O to GND Pulse waveform = 8/20 s SOT-666 90 P Peak pulse power W PP Flip-Chip 120 T Storage temperature range -55 to +150 C stg T Maximum junction temperature 125 C j T Lead solder temperature (10 seconds duration) 260 C L Table 2. Electrical characteristics (T = 25 C) amb Symbol Parameter V Reverse stand-off voltage RM I Leakage current RM V Breakdown voltage BR V Forward voltage F V Clamping voltage CL I Peak pulse current PP Value Symbol Parameter Test Conditions Unit Min Typ Max I Leakage current V = 5 V 0.5 A RM RM Breakdown voltage V I = 1 mA 6 V BR R between V and GND BUS V Forward voltage I = 10 mA 1 V F F SOT-666 2 2.5 V = 0 V, F = 1 MHz, V = 30 mV I/O OSC Flip-Chip 2.5 3 Capacitance between C i/o-GND I/O and GND SOT-666 1.5 1.8 V = 1.65 V, V = 4.3 V, I/O CC F = 1 MHz, V = 400 mV OSC Flip-Chip 1.8 2.0 SOT-666 1.0 1.25 V = 0 V, F = 1 MHz, V = 30 mV pF I/O OSC Flip-Chip 1.25 1.5 Capacitance C i/o-i/o between I/O SOT-666 0.75 0.9 V = 1.65 V, V = 4.3 V, I/O CC F = 1 MHz, V = 400 mV OSC Flip-Chip 0.9 1.20 C V = 0 V, F = 1 MHz, V = 30 mV 0.06 i/o-GND I/O OSC C V = 0 V, F = 1 MHz, V = 30 mV 0.05 i/o-i/o I/O OSC 2/11